Influence of isotopic composition of silicon on local vibrational modes of vacancy-oxygen complex

Authors

  • Ekaterina A. Tolkacheva Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science, 19 P. Broŭki Street, Minsk 220072, Belarus
  • Vladimir P. Markevich The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
  • Leonid I. Murin Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science, 19 P. Broŭki Street, Minsk 220072, Belarus

Keywords:

local vibrational modes, silicon, infrared absorption, isotopic shift, isotopic composition
Supporting Agencies
This work was carried out with partial financial support from the Belarusian Republican Foundation for Fundamental Research (project No. F20-111).

Abstract

Isotopic composition of natural silicon (28Si (92.23 %), 29Si (4.68 %) and 30Si (3.09 %)) affects noticeably the shape of infrared absorption bands related to the oxygen impurity atoms. The positions of local vibrational modes (LVMs), related to quasimolecules 28Si – 16OS – 29Si and 28Si – 16OS – 30Si (OS – substitutional oxygen atom) have been determined for the absorption spectra measured at Т ≅ 20 K and at room temperature (Т ≅ 300 K). An estimation of the isotopic shifts of corresponding modes in a semi empirical way has been done by the fitting the shape of the experimentally measured absorption band related to the vacancy-oxygen center in irradiated Si crystals. The LVM isotope shifts at Т ≅ 300 K are found to be (2.22 ± 0.25) сm–1 for 28Si – 16OS – 29Si and (4.19 ± 0.80) сm–1 for 28Si – 16OS – 30Si in relation to the most intense band with its maximum at (830.29 ± 0.09) cm–1 due to the vibrations of  28Si – 16OS – 28Si, and the full width at half maximum of the A-center absorption bands is (5.30 ± 0.26) cm–1. At Т ≅ 20 K the corresponding values have been determined as (1.51 ± 0.13); (2.92 ± 0.20); (835.78 ± 0.01) and (2.34 ± 0.03) сm–1. A model for the calculation of isotopic shifts in the considered case has been discussed. From an analysis of the observed isotopic shifts some information about the structure of the vacancy-oxygen complex in silicon at Т ≅ 20 K and at room temperature has been obtained.

Author Biographies

  • Ekaterina A. Tolkacheva, Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science, 19 P. Broŭki Street, Minsk 220072, Belarus

    PhD (physics and mathematics); senior researcher at the laboratory of radiation effects

  • Vladimir P. Markevich, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom

    PhD (physics and mathematics); senior researcher at the Photon Science Institute and School of Electrical and Electronic Engineering

  • Leonid I. Murin, Scientific and Practical Center of the National Academy of Sciences of Belarus for Materials Science, 19 P. Broŭki Street, Minsk 220072, Belarus

    PhD (physics and mathematics); leading researcher at the laboratory of radiation effects

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Published

2021-02-09

Issue

No. 1 (2021): Journal of the Belarusian State University. Physics

Section

Semiconductor Physics and Engineering

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How to Cite

(1)
Tolkacheva, E. A. .; Markevich, V. P. .; Murin, L. I. . Influence of Isotopic Composition of Silicon on Local Vibrational Modes of Vacancy-Oxygen Complex. Журнал Белорусского государственного университета. Физика 2021, No. 1, 102-110. https://doi.org/10.33581/2520-2243-2021-1-102-110.
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