Formation of epitaxial InSb films on semi-insulating GaAs(100) by explosive thermal evaporation: their structure and electrical properties

Authors

Keywords:

indium antimonide, film, substrate, vacuum deposition, structure, electrical properties

Abstract

In the present work, the influence of the deposition temperature of InSb films on semi-insulating GaAs(100) on their phase composition, crystal perfection and electrical properties was investigated. The InSb films of various extent of crystal perfection are formed by means of explosive thermal deposition of InSb on semi-insulating GaAs(100) substrates in the temperature range of 375–460 °C. X-ray diffraction analysis established that the films are heteroepitaxial. It is shown that an increase in the deposition temperature of InSb films from 375 to 460 °C leads to a change in the film surface roughness (Ra) from 3.4 to 19.1 nm. The Hall voltage sensitivity to the magnetic field of InSb films varies in the range of 500–1500 mV/T. The electron concentration (n) and mobility (μ) changes in the range of 2 ⋅ 1016 – 6 ⋅ 1016 cm–3, 10 ⋅ 103 – 21 ⋅ 103 cm2/(V ⋅ s). The formed InSb films on semi-insulating GaAs(100) substrate are of practical interest for the manufacture of highly sensitive miniature Hall devices.

Author Biographies

  • Evgenia A. Kolesnikova, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    trainee of junior researcher at the laboratory of physics of ion-plasma modification of solids, department of solid state physics, faculty of physics

  • Vladimir V. Uglov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; head of the department of solid state physics, faculty of physics

  • Andrey K. Kuleshov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); head of the laboratory of physics of ion-plasma modification of solids, department of solid state physics, faculty of physics

  • Dmitry P. Rusalsky, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); leading researcher at the laboratory of physics of ion-plasma modification of solids, department of solid state physics, faculty of physics

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Published

2021-10-20

Issue

No. 3 (2021): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Kolesnikova, E. A.; Uglov, V. V.; Kuleshov, A. K.; Rusalsky, D. P. Formation of Epitaxial InSb Films on Semi-Insulating GaAs(100) by Explosive Thermal Evaporation: Their Structure and Electrical Properties. Журнал Белорусского государственного университета. Физика 2021, No. 3, 20-25. https://doi.org/10.33581/2520-2243-2021-3-20-25.
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