Improving the efficiency of an industrial silicon solar cell by doping with nickel

Authors

  • Mukhamed Kabir Bakhadirkhanov Tashkent State Technical University named after Islam Karimov, 2 University Street, Tashkent 100095, Uzbekistan
  • Zoir Toxir Kenzhaev Karakalpak State University named after Berdakh, 1 Ch. Abdirov Street, Nukus 230112, Uzbekistan
  • Bayrambay K. Ismaylov Tashkent State Technical University named after Islam Karimov, 2 University Street, Tashkent 100095, Uzbekistan
  • Vladimir B. Odzhaev Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Uladislau S. Prasalovich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Yuri N. Yankovski Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Keywords:

silicon photocell, maximum power, nickel diffusion, nickel-enriched layer

Abstract

The possibility of adjusting the operational parameters of industrial solar cells produced by the company Suniva based on monocrystalline silicon by means of additional diffusion doping with nickel in the temperature range 700–1200 °C has been investigated. It is shown that the optimal temperature of nickel diffusion is Tdiff = 800–850 °C. In this case the value of the maximum power Pmax increases by 20–28 % in relation to the parameters of the original industrial photocell. At diffusion temperatures Tdiff > 1000 °C, a sharp decrease in Pmax occurs, which is associated with an increase in the depth of the p–n-junction due to the distillation of phosphorus atoms during high-temperature diffusion of nickel. The positive effect of diffusion alloying with nickel on the electrophysical parameters of photocells is greatest in the case when the nickel impurity clusters are in the region of the p–n-junction, i. e. with diffusion alloying to the front side of the plate. The action of electrically neutral nickel clusters is less pronounced when they are located in the region of the isotypic p–p+ transition; in case of diffusion alloying with nickel in the opposite side of the plate.

Author Biographies

  • Mukhamed Kabir Bakhadirkhanov, Tashkent State Technical University named after Islam Karimov, 2 University Street, Tashkent 100095, Uzbekistan

    academician of the Academy of Sciences of the Republic of Uzbekistan, doctor of science (physics and mathematics), full professor; professor at the department of digital electronics and microelectronics, faculty of electronics and automation

  • Zoir Toxir Kenzhaev, Karakalpak State University named after Berdakh, 1 Ch. Abdirov Street, Nukus 230112, Uzbekistan

    basic doctoral student at the department of physics semiconductors, physical faculty

  • Bayrambay K. Ismaylov, Tashkent State Technical University named after Islam Karimov, 2 University Street, Tashkent 100095, Uzbekistan

    PhD (physics and mathematics); senior lecturer at the department of digital electronics and microelectronics, faculty of electronics and automation

  • Vladimir B. Odzhaev, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; head of the department of semiconductor physics and nanoelectronics, faculty of physics

  • Uladislau S. Prasalovich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; head of the laboratory of semiconductor spectroscopy, department of semiconductor physics and nanoelectronics, faculty of physics

  • Yuri N. Yankovski, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); leading researcher at the laboratory of semiconductor spectroscopy, department of semiconductor physics and nanoelectronics, faculty of physics

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Published

2021-09-29

Issue

No. 3 (2021): Journal of the Belarusian State University. Physics

Section

Semiconductor Physics and Engineering

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How to Cite

(1)
Bakhadirkhanov, M. K.; Kenzhaev, Z. T.; Ismaylov, B. K.; Odzhaev, V. B.; Prasalovich, U. S.; Yankovski, Y. N. Improving the Efficiency of an Industrial Silicon Solar Cell by Doping With Nickel. Журнал Белорусского государственного университета. Физика 2021, No. 3, 32-39. https://doi.org/10.33581/2520-2243-2021-3-4-12.
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