Formation of epitaxial 3C-SiC layers on Si by rapid vacuum thermal processing

Authors

  • Mikhail V. Lobanok Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Stanislau L. Prakopyeu Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Maksim  A. Makhavikou A. N. Sevchenko Institute of Applied Physical Problems, Belarusian State University, 7 Kurčatava Street, Minsk 220045, Belarus
  • Olga V. Korolik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Peter I. Gaiduk Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Keywords:

epitaxial structures SiC/Si, vacuum carbidisation, rapid thermal processing, thin films
Supporting Agencies
This work was supported by the framework of the project T22-030 of the Belarusian Republican Foundation for Fundamental Research, as well as, in part, the project 3.1.2 of the state program of scientific research «Photonics and electronics for innovation» (No. 20212702).

Abstract

The results of a study of the structure and phase composition of epitaxial layers of silicon carbide (SiC) formed on silicon substrate with orientation (100) under rapid vacuum thermal processing are presented. Planar-view transmission electron microscopy investigation revealed the formation of epitaxial layers of cubic polytype SiC (3C-SiC) on silicon in the process of carbidisation at 1100 °C during 30 s, using a gas mixture of propane (10 %) and argon (90 %) as a carbon source. The formation of a monocrystalline 3C-SiC with polycrystalline inclusions and twins on all possible planes {111} was found. A rather narrow band of 793 cm–1 transverse optical phonon mode SiC on Raman spectra confirms the formation of a cubic polytype SiC. It is noted that the presence of a 180 cm–1 spectral line and a 793 cm–1 half-width band on Raman spectra indicate the presence of deformation defects in SiC.

Author Biographies

  • Mikhail V. Lobanok, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    postgraduate student at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

  • Stanislau L. Prakopyeu, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    senior lecturer at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

  • Maksim  A. Makhavikou, A. N. Sevchenko Institute of Applied Physical Problems, Belarusian State University, 7 Kurčatava Street, Minsk 220045, Belarus

    researcher at the laboratory of elionics

  • Olga V. Korolik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); head of the laboratory of energy-efficient materials and technologies, department of energy physics, faculty of physics

  • Peter I. Gaiduk, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics); professor at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

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Published

2022-06-08

Issue

No. 2 (2022): Journal of the Belarusian State University. Physics

Section

Semiconductor Physics and Engineering

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How to Cite

(1)
Lobanok, M. V. .; Prakopyeu, S. L. .; Makhavikou, M.  A. .; Korolik, O. V. .; Gaiduk, P. I. . Formation of Epitaxial 3C-SiC Layers on Si by Rapid Vacuum Thermal Processing. Журнал Белорусского государственного университета. Физика 2022, No. 2, 79-86. https://doi.org/10.33581/2520-2243-2022-2-79-86.
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