Bands shifting in the Raman spectra of silicon – germanium solid solutions treated in hydrogen plasma

Authors

  • Vlas S. Volobuev Belarusian State Technological University, 13a Sviardlova Street, Minsk 220006, Belarus
  • Alexei V. Giro Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

Keywords:

silicon – germanium solid solutions, hydrogen plasma, Raman scattering

Abstract

Silicon – germanium solid solution films with different compositions, treated in hydrogen plasma and also heat-treated at 275 °C, were studied by Raman spectroscopy. It was found that treatment in hydrogen plasma leads to a shift of the Si — Si, Ge — Ge and Si — Ge bands in the Raman spectrum towards lower frequencies. The Si — H bands observed in the spectra of pure silicon are not observed in the spectra of silicon – germanium solid solutions.

Author Biographies

  • Vlas S. Volobuev, Belarusian State Technological University, 13a Sviardlova Street, Minsk 220006, Belarus

    PhD (physics and mathematics), docent; senior lecturer at the department of physical-chemical methods and quality assurance, faculty of organic substances technology

  • Alexei V. Giro, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    senior lecturer at the department of solid state physics and nanotechnologies, faculty of physics

References

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Published

2024-04-23

Issue

No. 2 (2024): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Volobuev, V. S. .; Giro, A. V. . Bands Shifting in the Raman Spectra of Silicon – Germanium Solid Solutions Treated in Hydrogen Plasma. Журнал Белорусского государственного университета. Физика 2024, No. 2, 93-98.