Structure and electrical properties of InSb heteroepitaxial films after exposure to protons with energy of 1.5 MeV

Authors

  • Vladimir V. Uglov Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Andrej K. Kuleshov Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Dmitry P. Rusalsky Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

Keywords:

electrical properties, structure, InSb films, proton irradiation
Supporting Agencies
The research was carried out with the financial support of the Belarusian Republican Foundation for Fundamental Research (project T23ME-003).

Abstract

Indium antimonide (InSb) heteroepitaxial films on single-crystal gallium arsenide (GaAs) wafers with a thickness of 2.5 –2.7 μm, obtained by vacuum explosive thermal evaporation, are studied. They have unique resistance to the ultra-low temperatures of outer space and a certain level of radiation exposure, and are used as the main element in the creation of various microelectronic devices. X-ray diffractometry is used to study changes in the structure and electrical properties (including in a magnetic field) of InSb(100) heteroepitaxial films on GaAs(100) substrates after exposure to protons with an energy of 1.5 MeV and fluences of 1 ⋅ 1015, 5 ⋅ 1015 and 1 ⋅ 1016 H+ per 1 cm2. It is determined that the angular position, integral intensity, diffraction peak broadening from InSb(100), crystal lattice parameter, electrical properties of the films and mechanical stresses in them do not change when the films are irradiated with protons up to a fluence of 1 ⋅ 1015 H+ per 1 cm2. It has been established that when films are exposed to protons with fluences of 5 ⋅ 1015 and 1 ⋅ 1016 H+ per 1 cm2, there is a decrease in the integral intensity of the diffraction peak from InSb(100). Calculations of atomic radiation damage and vacancy concentration in InSb(100) films at the above-mentioned fluences, performed using the SRIM programme, showed their linear growth and an increase in values up to 10 times at the maximum proton fluence. It is assumed that the displacement of atoms and the accumulation of radiation point defects cause distortion of the InSb crystal lattice and a decrease in the integral intensity of the diffraction peak. It is noted that under these irradiation conditions, the Hall voltage and Hall constant increase, while the concentration of charge carriers, their mobility and the specific conductivity of the films decrease. It seems promising to study the radiation resistance of the structure and electrical properties of InSb films after exposure to protons with an energy of 1.5 MeV and high fluences, which form the basis of radiation exposure in space.

Author Biographies

  • Vladimir V. Uglov, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; head of the department of solid state physics and nanotechnologies, faculty of physics

  • Andrej K. Kuleshov, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); head of the laboratory of physics of ion-plasma modification of solids, department of solid state physics and nanotechnologies, faculty of physics

  • Dmitry P. Rusalsky, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); leading researcher at the laboratory of physics of ion-plasma modification of solids, department of solid state physics and nanotechnologies, faculty of physics

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Published

2025-11-04

Issue

No. 2 (2025): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Uglov, V. V.; Kuleshov, A. K.; Rusalsky, D. P. Structure and Electrical Properties of InSb Heteroepitaxial Films After Exposure to Protons With Energy of 1.5 MeV. Журнал Белорусского государственного университета. Физика 2025, No. 2, 60-67.