Механизм нитридизации слоев диоксида кремния при импульсной фотонной обработке в азотной атмосфере

Владимир Александрович Пилипенко; Наталья Станиславовна Ковальчук; Ярослав Александрович Соловьёв; Дмитрий Викторович Шестовский; Виктор Михайлович Анищик; Владимир Васильевич Понарядов

Authors

Uladzimir A. Pilipenka «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
Natalia S. Kovalchuk «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
Jaroslav A. Solovjov «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
Dmitri V. Shestovsky «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
Viktor M. Anishchik Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
Vladimir V. Ponariadov Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

Keywords:

silicon, silicon dioxide, pulsed photon treatment, nitridisation, mass spectroscopy of secondary ions

Abstract

The distribution profiles of Si — N bond concentrations in the Si – SiO2 system were investigated using time-of-flight mass spectroscopy of secondary ions after nitridisation of silicon dioxide by pulsed photon treatment in a nitrogen ambient, which provides heating by an incoherent radiation flux from quartz halogen lamps directed at the non-working side of the silicon substrate to a temperature of 1150 °C in approximately 7 s. Silicon dioxide layers with a thickness of 17.7 nm were obtained by pyrolytic oxidation of boron-doped single-crystal silicon substrates with a resistivity of 12 Ω ⋅ cm and orientation (100) at a temperature of 850 °C for 40 min. It has been established that silicon dioxide nitridisation during pulsed photon treatment in a nitrogen ambient proceeds due to accelerated diffusion of N− ions formed as a result of tunnelling and thermionic emission of electrons from the surface of the silicon layer. Nitridisation leads to the formation of a layer with maximum nitrogen concentration on the surface of silicon dioxide and at the Si – SiO2 interface by reducing the activation energy of Si — N bond formation caused by electronic excitation in silicon and possible rupture of Si — O, Si — OH and Si — Si bonds. The reducing the activation energy occurs as a result of changes in the stresses, angles and strength of Si — O bonds due to photonic and thermal effects and the formation of these bonds on the surface of silicon with a deformed crystal lattice due to its mechanical polishing.

Author Biographies

Uladzimir A. Pilipenka, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

doctor of science (engineering), corresponding member of the National Academy of Sciences of Belarus, full professor; deputy director for scientific development at the state centre «Belmicroanalysis»
Natalia S. Kovalchuk, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

PhD (engineering), docent; deputy general director and chief engineer
Jaroslav A. Solovjov, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

doctor of science (engineering), docent; head of the laboratory of new technologies and materials
Dmitri V. Shestovsky, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

PhD (physics and mathematics); engineer-technologist at the department of advanced technological processes
Viktor M. Anishchik, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), full professor; professor at the department of solid state physics and nanotechnologies, faculty of physics
Vladimir V. Ponariadov, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; head of the training laboratory, department of solid state physics and nanotechnologies, faculty of physics

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