Photoluminescence of AlxGa1 − xP еpitaxial layers grown by liquid-phase epitaxy method

Authors

  • Dmitrii I. Brinkevich Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Vladimir B. Odzhaev Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Uladislau S. Prasalovich Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Yurii N. Yankovski Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Zoir T. Kenzhaev Tashkent State Technical University named after Islam Karimov, 2 Universitetskaja Street, Tashkent 100095, Uzbekistan
  • Bayrambay K. Ismaylov Tashkent State Technical University named after Islam Karimov, 2 Universitetskaja Street, Tashkent 100095, Uzbekistan

Keywords:

AlGaP compounds, epitaxial layers, photoluminescence, liquid-phase epitaxy, rare-earth elements, acceptor impurities
Supporting Agencies
This work was carried out within the framework of the state programme of scientific research «Photonics and electronics for innovation» (subprogramme «Micro- and nanoelectronics», assignment 3.11.3). The author are grateful to N. A. Sobolev for help in measuring the photoluminescence spectra and discussing the experimental results.

Abstract

AlxGa1 − xP epitaxial layers (x = 0.06 – 0.61) grown on GaP substrates by crystallisation from indium-based melt-solutions in the temperature interval of 975 – 950 °С were investigated. The thickness of layers varied in the range of 3 –19 μm. Elemental analysis was made using local X-ray probe microanalysis. Measurement of the photoluminescence spectra at temperature of 4.2 K gave the following results. A number of bands were observed in the range of 2.0 –2.4 eV in all spectra of the studied AlxGa1 − xP samples. With an increase in aluminium concentration, they shifted to the high-energy region. With an aluminium content in the melt-solution in the amount of 0.16 wt. %, the most intense band had a maximum at 549 nm, which corresponds to the green colour of the radiation. These bands were probably caused by the donor – acceptor pairs recombination. Doping of the epitaxial layers with zinc and magnesium was carried out by diffusion. GaP microparticles up to 4 μm in size were detected in the AlGaP epitaxial layers. The possibility of doping the AlGaP epitaxial layers with nitrogen by adding P3N5 to the melt was demonstrated. It was concluded that doping of AlxGa1 − xP epitaxial layers with nitrogen and sulfur occurs through autodiffusion of these impurities from the substrate due to their presence in GaP particles. Doping of AlGaP epitaxial layers with the rare-earth element gadolinium by introducing it into the melt-solution as well as doping these epitaxial layers with zinc by diffusion did not result in any changes in the photoluminescence spectra in the range of 2.0 –2.4 eV. The broad intensive band with maximum near 1.99 eV was observed in AlGaP epitaxial layers doped with magnesium by diffusion. It was established that noticeable contamination of AlxGa1 − xP epitaxial layers with oxygen during liquid-phase epitaxy is absent. Changes in photoluminescence caused by radiative recombination on deep defects and impurities introduced into the layers during various processing stages were analysed.

Author Biographies

  • Dmitrii I. Brinkevich, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); leading researcher at the laboratory of semiconductor spectroscopy, department of semiconductor physics and nanoelectronics, faculty of physics

  • Vladimir B. Odzhaev, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; head of the department of semiconductor physics and nanoelectronics, faculty of physics

  • Uladislau S. Prasalovich, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; head of the laboratory of semiconductor spectroscopy, department of semiconductor physics and nanoelectronics, faculty of physics

  • Yurii N. Yankovski, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); leading researcher at the laboratory of semiconductor spectroscopy, department of semiconductor physics and nanoelectronics, faculty of physics

  • Zoir T. Kenzhaev, Tashkent State Technical University named after Islam Karimov, 2 Universitetskaja Street, Tashkent 100095, Uzbekistan

    PhD (physics and mathematics); associate professor at the department of digital electronics and microelectronics, faculty of electronics and automation

  • Bayrambay K. Ismaylov, Tashkent State Technical University named after Islam Karimov, 2 Universitetskaja Street, Tashkent 100095, Uzbekistan

    PhD (physics and mathematics); associate professor at the department of digital electronics and microelectronics, faculty of electronics and automation

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Published

2026-01-14

Issue

No. 3 (2025): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Brinkevich, D. I.; Odzhaev, V. B.; Prasalovich, U. S.; Yankovski, Y. N.; Kenzhaev, Z. T.; Ismaylov, B. K. Photoluminescence of AlxGa1 − XP еpitaxial Layers Grown by Liquid-Phase Epitaxy Method. Журнал Белорусского государственного университета. Физика 2026, No. 3, 33-39. https://doi.org/10.33581/2520-2243-2025-3-%p.
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