Odzaev, V. B., Panfilenka, A. K., Pyatlitski, A. N., Prasalovich, U. S., Kovalchuk, N. S., Soloviev, Y. A., Filipenia, V. A., & Shestovski, D. V. (2020). Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs. Journal of the Belarusian State University. Physics, 3, 55-64. https://doi.org/10.33581/2520-2243-2020-3-55-64