GIRO, Alexei V.; POKOTILO, Yuri M.; PETUKH, Alla N. Formation and annealing of radiation defects in silicon, implanted with hydrogen ions. Journal of the Belarusian State University. Physics, [S. l.], n. 3, p. 68–72, 2019. DOI: 10.33581/2520-2243-2019-3-68-72. Disponível em: https://journals.bsu.by/index.php/physics/article/view/1395. Acesso em: 17 jul. 2026.