ODZAEV, Vladimir B.; PANFILENKA, Anatoli K.; PYATLITSKI, Aliaksandr N.; PRASALOVICH, Uladislau S.; KOVALCHUK, Natalya S.; SOLOVIEV, Yaroslav A.; FILIPENIA, Viktar A.; SHESTOVSKI, Dmitry V. Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs. Journal of the Belarusian State University. Physics, [S. l.], n. 3, p. 55–64, 2020. DOI: 10.33581/2520-2243-2020-3-55-64. Disponível em: https://journals.bsu.by/index.php/physics/article/view/2870. Acesso em: 18 jul. 2026.