[1]
V. M. Anishchik, V. A. Harushka, U. A. Pilipenka, V. V. Ponariadov, and V. A. Saladukha, “Redistribution of impurity in ion-doped layers during fast heat treatment of gate dielectric”, Журнал Белорусского государственного университета. Физика, no. 2, pp. 48–53, May 2019, doi: 10.33581/2520-2243-2019-2-48-53.