Odzaev VB, Panfilenka AK, Pyatlitski AN, Prasalovich US, Kovalchuk NS, Soloviev YA, et al. Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs. Журнал Белорусского государственного университета. Физика [Internet]. 2020 Oct. 7 [cited 2026 Jul. 17];(3):55-64. Available from: https://journals.bsu.by/index.php/physics/article/view/2870