1.
Uglov VV, Kuleshov AK, Rusalsky DP. Structure and electrical properties of InSb heteroepitaxial films after exposure to protons with energy of 1.5 MeV. Журнал Белорусского государственного университета. Физика [Internet]. 2025 Nov. 4 [cited 2026 Jul. 17];(2):60-7. Available from: https://journals.bsu.by/index.php/physics/article/view/6945