Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs

Authors

  • Vladimir B. Odzaev Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Anatoli K. Panfilenka «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Aliaksandr N. Pyatlitski «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Uladislau S. Prasalovich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Natalya S. Kovalchuk «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Yaroslav A. Soloviev «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Viktar A. Filipenia «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Dmitry V. Shestovski «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

Keywords:

gate dielectric, ion implantation, nitrogen ions, power MOS-transistors

Abstract

Power MOS-transistors with vertical structure are investigated. Additionally, in some devices, ion implantation of nitrogen with energies of 20 and 40 keV was carried out in a dose range of 1 ⋅1013–5 ⋅ 1014 cm –2 through a sacrificial oxide 20 nm thick. For one group of wafers, rapid thermal annealing was first carried out, then oxide removal (forward order), for the other group – in the opposite sequence (reverse order). It was found that with the additional doping of nitrogen ions in doses of 1⋅1013–5 ⋅ 1013 cm –2 with energy of 20 keV, an increasing of gate dielectric charge to breakdown for both types of annealing is observed. The maximum effect occurred for the samples at a dose of nitrogen ions of 1⋅1013 cm –2 with the forward heat treatment order. This is due to the interaction of nitrogen atoms with dangling bonds of the Si – SiO2 interface during annealing, as a result of which strong chemical bonds are formed that prevent charge accumulation on the surface of the Si – SiO2 interface. It is assumed that the main contribution to the gate leakage current is made by the tunneling of charge carriers through traps.

Author Biographies

  • Vladimir B. Odzaev, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    , doctor of science (physics and mathematics), full professor; head of the department of semiconductor
    physics and nanoelectronics, faculty of physics

  • Anatoli K. Panfilenka, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

    chief engineer

  • Aliaksandr N. Pyatlitski, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

    PhD (physics and mathematics); director of the state center «Belmicroanalysis», branch STC «Belmicrosystems»

  • Uladislau S. Prasalovich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; head of the laboratory of semiconductor spectroscopy, department of semiconductor physics and nanoelectronics, faculty of physics.

  • Natalya S. Kovalchuk, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

    PhD (engineering), docent; deputy chief engineer

  • Yaroslav A. Soloviev, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

    PhD (engineering), docent; deputy director of the branch «Transistor»

  • Viktar A. Filipenia, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

    leading engineer at the state center «Belmicroanalysis», branch STC «Belmicrosystems»

  • Dmitry V. Shestovski, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

    engineer-technologist at the department of advanced technological processes

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Published

2020-10-07

Issue

No. 3 (2020): Journal of the Belarusian State University. Physics

Section

Semiconductor Physics and Engineering

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How to Cite

(1)
Odzaev, V. B.; Panfilenka, A. K.; Pyatlitski, A. N.; Prasalovich, U. S.; Kovalchuk, N. S.; Soloviev, Y. A.; Filipenia, V. A.; Shestovski, D. V. Influence of Nitrogen Ion Implantation on the Electrophysical Properties of the Gate Dielectric of Power MOSFETs. Журнал Белорусского государственного университета. Физика 2020, No. 3, 55-64. https://doi.org/10.33581/2520-2243-2020-3-55-64.
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