Surface morphology of cadmium telluride films prepared by vacuum sputtering on the silicon and cadmium telluride substrates

Authors

  • Aziza T. Akobirova Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan
  • Victoryia I. Halauchyk Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Michail G. Lukashevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Nizom S. Sultonov Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan
  • Rajabmurod B. Hamroqulov Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

Keywords:

cadmium telluride, substrate, film, atomic-force and scan electron microscopy
Supporting Agencies
This work was performed in framework of Agreement on cooperation between the Belarusian State University and the Tajik National University. The authors are grateful to L. V. Baran, S. V. Gusakova, and S. V. Zlotsky for help in making the measurements and discussing the results.

Abstract

The results of atomic-force and scan electron microscopy of cadmium telluride films prepared on silicon and monocrystall in cadmium telluride substrates by means of sputtering in quasi-closed volume are presented. It is shown that mean grain size of the obtained films ranging in the interval 2.5–5.0 µm with roughness of the films changing in the range 34,1–87,5 nm. Etching of films bromine-butyl etchant results in improved surface morphology and roughness of the film reduces to 17.9 nm. The elemental composition of the film surface layer was determined by X-ray microanalysis and structure by X-ray diffractometer.

Author Biographies

  • Aziza T. Akobirova, Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

    PhD (physics and mathematics); associate professor at the department of physical electronics, faculty of physics

  • Victoryia I. Halauchyk, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    student at the faculty of physics

  • Michail G. Lukashevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; professor at the department of semiconductors and nanoelectronic, faculty of physics

  • Nizom S. Sultonov, Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

    doctor of science (physics and mathematics); professor at the department of physical electronics, faculty of physics

  • Rajabmurod B. Hamroqulov, Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

    PhD (physics and mathematics); associate professor at the department of physical electronics, faculty of physics

References

  1. Bovina L. A. [Physics of compounds AIIBVI]. Moscow, 1986.
  2. Voronkov E. N., Varganov S. V., Shalimov K. V. [The film photovoltaic cell based on CdTe]. Vopr. spets. elektroniki. 1984. Ser. 11, issue 2. P. 50–53 (in Russ.).
  3. Khamrokulov R. B. [Structure and electrical properties of CdTe films]. Vestnik Tadzhikskogo natsional’nogo univ. Ser. estestv. nauk. 2011. Vol. 70, No. 6. P. 26–31 (in Russ.).
  4. Ronassi A. A., Haleisha A. N., Zhukousky K. B., et al. Structure and photoelectrical properties of CdTe films produced by electrochemical deposition. Vestnik BGU. Ser. 1, Fiz. Mat. Inform. 2011. No. 1. P. 24–27 (in Russ.).
  5. Mayorov V. A. [Electro and morphological properties of the films of CdTe, synthesized by the method of molecular layering]. Fiz. tekh. poluprovodn. 2010. Vol. 44, issue 5. P. 590–593 (in Russ.).
  6. Sultonov N. S., Akobirova A. T., Khamrokulov R. B., et al. Structure CdTe films obtained by vacuum deposition in quasiclosed volume on various substrates. Vestnik Tadzhikskogo natsional’nogo univ. Ser. estestv. nauk. 2013. No. 2. P. 91–95 (in Russ.).
  7. Mironov V. L. [Introduction in skaning microscopy]. Nizhny Novgorod, 2004 (in Russ.).
  8. Schuka A. A. [Nanoelectronics]. Moscow, 2007 (in Russ.).
  9. Luft V. D., Perevoshchikov V. A., Vozmilova L. N., et al. [Physical and chemical methods of processing semiconductor]. Moscow, 1982 (in Russ.).

Downloads

Published

2017-05-30

Issue

No. 2 (2017): Journal of the Belarusian State University. Physics

Section

Semiconductor Physics and Engineering

License

The authors who are published in this journal agree to the following:

  1. The authors retain copyright on the work and provide the journal with the right of first publication of the work on condition of license Creative Commons Attribution-NonCommercial. 4.0 International (CC BY-NC 4.0).
  2. The authors retain the right to enter into certain contractual agreements relating to the non-exclusive distribution of the published version of the work (e.g. post it on the institutional repository, publication in the book), with the reference to its original publication in this journal.
  3. The authors have the right to post their work on the Internet (e.g. on the institutional store or personal website) prior to and during the review process, conducted by the journal, as this may lead to a productive discussion and a large number of references to this work. (See The Effect of Open Access.)

How to Cite

(1)
Akobirova, A. T.; Halauchyk, V. I.; Lukashevich, M. G.; Sultonov, N. S.; Hamroqulov, R. B. Surface Morphology of Cadmium Telluride Films Prepared by Vacuum Sputtering on the Silicon and Cadmium Telluride Substrates. Журнал Белорусского государственного университета. Физика 2017, No. 2, 69-75.