Polarization switching transients in surface-emitting semiconductor lasers

Authors

  • Leonid I. Burov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Alexander S. Gorbatsevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Pavel M. Lobatsevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Keywords:

polarization switching, polarization hysteresis, surface-emitting semiconductor lasers, anisotropy

Abstract

Based on numerical simulation, polarization hysteresis (PH) in surface-emitting semiconductor lasers (VCSEL) has been studied. In the process the characteristic feature was initiation of VCSEL by the triangular pulse, in which the current was linearly increasing from zero to the value significantly exceeding the polarization switching point (PS) and subsequently decreasing to zero at the same rate. The obtained numerical results demonstrated that all the peculiarities of the PH loop generation were associated with the lag effect of the polarization characteristics formation in the region of polarization switching. In particular, it has been shown that the range of the PH loop generation linearity can be expanded by shifting the PS point to the region of high injection currents.

Author Biographies

  • Leonid I. Burov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; associate professor at the department of general physics, faculty of physics

  • Alexander S. Gorbatsevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); associate professor at the department of general physics, faculty of physics

  • Pavel M. Lobatsevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    postgraduate student at the department of general physics, faculty of physics

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Published

2019-01-20

How to Cite

(1)
Burov, L. I.; Gorbatsevich, A. S.; Lobatsevich, P. M. Polarization Switching Transients in Surface-Emitting Semiconductor Lasers. Журнал Белорусского государственного университета. Физика 2019, No. 2, 17-24.