Optical and electronic properties of germanium – silicon solid solutions

Authors

  • Olga Yu. Smirnova Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Georgy F. Stelmach Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Yuri M. Pokotilo Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Alla N. Petukh Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vladimir P. Markevich University of Manchester, Sackville Street, Manchester M601QD, United Kingdom
  • Olga V. Korolik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Alexander V. Mazanik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Keywords:

solid solutions, silicon, germanium, ions, hydrogen, Raman scattering, phonon, ionization energy, radiation defect

Abstract

The electronic and structural properties of Ge1-xSix solid solutions (x = 0 - 0.062) grown by the Czochralski methodand implanted with proton were studied using deep level transient spectroscopy (DLTS) and Raman scattering. It wasfound that with an increase of the silicon fraction in the solution, the single-phonon peak corresponding to Ge-Gevibrations shifts in the Raman spectra to lower frequencies with a rate ΔωGe - Ge/Δx = (31,3 ± 0,7) cm-1, and the tempe-rature of the maximum of the DLTS peak for the main radiation defect at aconstant electron emission rate en increases. The corresponding rate of increase in the free activation energy for electron emission is ΔEe/Δx = (2,9 ± 0,1) eV. The correlation between increasing Si content and decreasing in the lattice constant of Ge1- xSix, corresponding to Vegardʼs law a(x)= aGe-(aGe-aSi)x = 5,623 (0,25 ± 0,3)x Å, was found from the Raman peak shift in the anharmonic approximationfor the atomic interaction in a crystal. Alinear dependence of the change in the activation energy of a defect on the latticeparameter ΔEe/Δa = (1,6 ± 0,2) meV/Å was found to occur. It was shown that an increasing in the ionization energy ofdefect is associated with a decreasing in the average length of the Ge-Ge bond.

Author Biographies

  • Olga Yu. Smirnova, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    lecturer at the department of physical optics and applied informatics, faculty of physics

  • Georgy F. Stelmach, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics аnd mathematics), docent; associate professor at the department of physical optics and applied informatics, faculty of physics

  • Yuri M. Pokotilo, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; associate professor at the department of energy physics, faculty of physics

  • Alla N. Petukh, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); senior researcher at the department of energy physics, faculty of physics

  • Vladimir P. Markevich, University of Manchester, Sackville Street, Manchester M601QD, United Kingdom

    PhD (physics and mathematics); researcher

  • Olga V. Korolik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); senior researcher at the department of energy physics, faculty of physics

  • Alexander V. Mazanik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; associate professor at the department of energy physics, faculty of physics

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Published

2019-02-03

Issue

No. 2 (2018): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Smirnova, O. Y.; Stelmach, G. F.; Pokotilo, Y. M.; Petukh, A. N.; Markevich, V. P.; Korolik, O. V.; Mazanik, A. V. Optical and Electronic Properties of Germanium – Silicon Solid Solutions. Журнал Белорусского государственного университета. Физика 2019, No. 2, 52-60.