Influence of the rapid thermal treatment of the initial silicon wafers on the process of their pyrogenic oxidation

Authors

  • Victor M. Anishchik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Valiantsina A. Harushka «Belmikroanaliz» of the branch «Belmikrosistemy», JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus
  • Uladzimir A. Pilipenka Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vladimir V. Ponariadov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vitali A. Saladukha Integral, 121A Kazinca Street, Minsk 220108, Belarus

Keywords:

rapid thermal treatment, disrupted layer, pyrogenic oxidation, refraction ratio

Abstract

The work represents the investigation results of influence of rapid thermal treatment of the initial silicon wafers on the process of their pyrogenic oxidation. It is shown that the given treatment results in the quality enhancement of silicon dioxide, formed on their surface owing to thickness reduction of the disrupted layer, substantially influencing the initial stage of the oxidation process.

Author Biographies

  • Victor M. Anishchik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; dean of the faculty of physics

  • Valiantsina A. Harushka, «Belmikroanaliz» of the branch «Belmikrosistemy», JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

    leading engineer

  • Uladzimir A. Pilipenka, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    corresponding member of the National Academy of Sciences of Belarus, doctor of science (engineering); professor at the department of semiconductor physics and nanoelectronics, faculty of physics

  • Vladimir V. Ponariadov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; deputy dean of the faculty of physics

  • Vitali A. Saladukha, Integral, 121A Kazinca Street, Minsk 220108, Belarus

    PhD (engineering); general director

References

  1. Krasnikov G. Ya. Konstruktivno-tekhnologicheskie osobennosti submikronnykh MOP-tranzistorov [Design-Technological Peculiarities of the Submicron MOS-Transistors] : in 2 parts. Moscow : Tekhnosfera, 2002. Part 1 (in Russ.).
  2. Pilipenko V. A. Bystrye termoobrabotki v tekhnologii SBIS [Rapid Thermal Treatments in the VLSI Technology]. Minsk : Publ. Centre of BSU, 2004 (in Russ.).

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Published

2019-02-06

Issue

No. 2 (2018): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Anishchik, V. M.; Harushka, V. A.; Pilipenka, U. A.; Ponariadov, V. V.; Saladukha, V. A. Influence of the Rapid Thermal Treatment of the Initial Silicon Wafers on the Process of Their Pyrogenic Oxidation. Журнал Белорусского государственного университета. Физика 2019, No. 2, 81-85.