The effect of the orientational anisotropy of VCSEL parameters on the possibility to implement polarization switching
Keywords:
polarization switching, surface-emitting semiconductor lasers, anisotropy, dichroismAbstract
Based on the results of numerical simulation, orientational anisotropy effects of the spontaneous emission factor, mirror reflectivity, and internal losses on the polarization switching (PS) behavior of surface-emitting semiconductor lasers (VCSEL) have been studied. It has been shown that actually the orientational anisotropy of a spontaneous emission factor has no effect on PS parameters, though even minor anisotropy of the mirror reflectivity can lead to a substantial shift of the PS point. The internal loss orientational anisotropy is liable to increase the amplification anisotropy effects as well as to compete with them, changing not only the PS point position but also the limiting stationary values of a polarization degree.
References
- Chang-Hasnain C. J., Harbison J. P., Florez L. T., et al. Polarization characteristics of quantum well vertical cavity surface emitting lasers. Electron. Lett. 1991. Vol. 27, issue 2. P. 163–165. DOI: 10.1049/el:19910105.
- Ostermann J. M., Michalzik R. Polarization Control of VCSELs. VCSELs. 2013. Vol. 166. P. 147–180. DOI: 10.1007/978-3-642-24986-0_5.
- Kawaguchi H. Recent progress in polarization-bistable VCSELs and their applications to all-optical signal processing. Adv. lasers. 2015. P. 1–17. DOI: 10.1007/978-94-017-9481-7_1.
- Martin-Regalado J., Prati F., San Miguel M., et al. Polarization properties of vertical-cavity surface-emitting lasers. IEEEJ. Quantum Electron. 1997. Vol. 33, issue 5. P. 765–783. DOI: 10.1109/3.572151.
- Prati F., Caccia P., Castelli F. Effects of gain saturation on polarization switching in vertical-cavity surface-emitting lasers. Phys. Rev. A. 2002. Vol. 66, issue 6. Article ID: 063811. DOI: 10.1103/PhysRevA.66.063811.
- Jadan M., Burov L. I., Gorbatsevich A. S., et al. Polarization switching in single-mode semiconductor injection laser. Zh. prikl. spektrosk. [J. Appl. Spectrosc.]. 2009. Vol. 76, No. 5. P. 717–724 (in Russ.).
- Jadan M., Burov L. I., Gorbatsevich A. S., et al. Dynamics of polarization switching in single-mode injection semiconductor laser. Zh. prikl. spektrosk. [J. Appl. Spectrosc.]. 2010. Vol. 77, No. 1. P. 74–81 (in Russ.).
- Berger G., Muller R., Klehr A., et al. Polarization bistability in strained ridge waveguide InGaAsP/InP lasers: Experiment and theory. J. Appl. Phys. 1995. Vol. 77. P. 6135–6144. DOI: 10.1063/1.359139.
- Burak D., Moloney J. V., Binder R. Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron. 2000. Vol. 36, issue 8. P. 956–970. DOI: 10.1109/3.853556.
- Danckaert J., Nagler B., Albert J., et al. Minimal rate equations describing polarization switching in vertical-cavity surface-emitting lasers. Opt. Commun. 2002. Vol. 201. P. 129–137.
- Burov L. I., Gorbatsevich A. S., Lobatsevich P. M. The induced amplification dichroism in surface-emitting semiconductor lasers. Vestnik BGU. Ser. 1, Fiz. Mat. Inform. 2016. No. 3. P. 63–70 (in Russ.).
- Ryvkin B., Panajotov K., Georgievski A., et al. Effect of photon-energy-dependent loss and gain mechanisms on polarization switching in vertical-cavity surface-emitting lasers. J. Opt. Soc. Am. B. 1999. Vol. 16, No. 1. P. 2106–2111. DOI: 10.1364/70SAB.16.002106.
- Cassidy D. T., Adams C. S. Polarization of the output of InGaAsP semiconductor diode laser. IEEE J. Quantum Electron. 1989. Vol. 25, issue 6. P. 1156–1160. DOI: 10.1109/3.29241.
Downloads
Published
Issue
Section
License
The authors who are published in this journal agree to the following:
- The authors retain copyright on the work and provide the journal with the right of first publication of the work on condition of license Creative Commons Attribution-NonCommercial. 4.0 International (CC BY-NC 4.0).
- The authors retain the right to enter into certain contractual agreements relating to the non-exclusive distribution of the published version of the work (e.g. post it on the institutional repository, publication in the book), with the reference to its original publication in this journal.
- The authors have the right to post their work on the Internet (e.g. on the institutional store or personal website) prior to and during the review process, conducted by the journal, as this may lead to a productive discussion and a large number of references to this work. (See The Effect of Open Access.)












