Plasmon absorption of infrared radiation in periodic structures Si/Si3N4/SiO2/Si/Al with window surface layer

Authors

  • Asiya I. Mukhammad Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Oleg Yu. Nalivaiko «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
  • Vladimir V. Kolos «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
  • Peter I. Gaiduk «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

Keywords:

plasmonic absorption, periodic structures, absorption spectra, Fourier spectroscopy, doped silicon
Supporting Agencies
This work was carried out with financial support of the Belarusian Republican Foundation for Fundamental Research (grant No. Т22-030).

Abstract

Transmission and reflection spectra of periodic window structures Si/Si3N4/SiO2/Si and Si /Si3N4/SiO2/Si/Al befor and after thermal annealing were obtained using Fourier transform infrared spectrometry. Experimental transmission and absorption spectra were studied in comparison with theoretical ones. Theoretical spectra were calculated using the finite difference time domain method. The theoretical transmission spectra are in good correlation with the experimental ones. It was found that after thermal annealing, the transmission level of the structure drops by 5–20 %. It has been shown that deposition of a 90 nm thick aluminium film on the back side of the structure does not affect the transmission level of the structure without annealing, but reduces the transmission level of the annealed structure by more than 20 %. It was noted that the absorption intensity of the n+-Si/poly-Si/Si3N4/SiO2/Si/Al structure does not fall below 70 % in the wavelength range of 2.5–9.0 μm. In this case, the intensity of the absorption peak at a wavelength of 4.3 μm is 87 %. It has been established that the appearance of absorption peaks at wavelengths of 4.3 and 8.0 μm in the absorption spectra of the annealed structure can be associated with the manifestation of plasmonic effects arising due to the periodicity of the structure.

Author Biographies

  • Asiya I. Mukhammad, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

    postgraduate student at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

  • Oleg Yu. Nalivaiko, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

    PhD (engineering); deputy chief technologist

  • Vladimir V. Kolos, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

    PhD (physics and mathematics); deputy head of the laboratory of new technologies and materials

  • Peter I. Gaiduk, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

    doctor of science (physics and mathematics), docent; professor at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

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Published

2024-01-22

Issue

No. 1 (2024): Journal of the Belarusian State University. Physics

Section

Condensed State Physics

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How to Cite

(1)
Mukhammad, A. I. .; Nalivaiko, O. Y. .; Kolos, V. V. .; Gaiduk, P. I. . Plasmon Absorption of Infrared Radiation in Periodic Structures Si Si3N4 SiO2 Si Al With Window Surface Layer. Журнал Белорусского государственного университета. Физика 2024, No. 1, 49-56.