The effect of the orientational anisotropy of VCSEL parameters on the possibility to implement polarization switching

Authors

  • Leonid I. Burov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Alexander S. Gorbatsevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Pavel M. Lobatsevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Keywords:

polarization switching, surface-emitting semiconductor lasers, anisotropy, dichroism

Abstract

Based on the results of numerical simulation, orientational anisotropy effects of the spontaneous emission factor, mirror reflectivity, and internal losses on the polarization switching (PS) behavior of surface-emitting semiconductor lasers (VCSEL) have been studied. It has been shown that actually the orientational anisotropy of a spontaneous emission factor has no effect on PS parameters, though even minor anisotropy of the mirror reflectivity can lead to a substantial shift of the PS point. The internal loss orientational anisotropy is liable to increase the amplification anisotropy effects as well as to compete with them, changing not only the PS point position but also the limiting stationary values of a polarization degree. 

Author Biographies

  • Leonid I. Burov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; associate professor at the department of general physics, faculty of physics

  • Alexander S. Gorbatsevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics); associate professor at the department of general physics, faculty of physics

  • Pavel M. Lobatsevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    postgraduate student at the department of general physics, faculty of physics

References

  1. Chang-Hasnain C. J., Harbison J. P., Florez L. T., et al. Polarization characteristics of quantum well vertical cavity surface emitting lasers. Electron. Lett. 1991. Vol. 27, issue 2. P. 163–165. DOI: 10.1049/el:19910105.
  2. Ostermann J. M., Michalzik R. Polarization Control of VCSELs. VCSELs. 2013. Vol. 166. P. 147–180. DOI: 10.1007/978-3-642-24986-0_5.
  3. Kawaguchi H. Recent progress in polarization-bistable VCSELs and their applications to all-optical signal processing. Adv. lasers. 2015. P. 1–17. DOI: 10.1007/978-94-017-9481-7_1.
  4. Martin-Regalado J., Prati F., San Miguel M., et al. Polarization properties of vertical-cavity surface-emitting lasers. IEEEJ. Quantum Electron. 1997. Vol. 33, issue 5. P. 765–783. DOI: 10.1109/3.572151.
  5. Prati F., Caccia P., Castelli F. Effects of gain saturation on polarization switching in vertical-cavity surface-emitting lasers. Phys. Rev. A. 2002. Vol. 66, issue 6. Article ID: 063811. DOI: 10.1103/PhysRevA.66.063811.
  6. Jadan M., Burov L. I., Gorbatsevich A. S., et al. Polarization switching in single-mode semiconductor injection laser. Zh. prikl. spektrosk. [J. Appl. Spectrosc.]. 2009. Vol. 76, No. 5. P. 717–724 (in Russ.).
  7. Jadan M., Burov L. I., Gorbatsevich A. S., et al. Dynamics of polarization switching in single-mode injection semiconductor laser. Zh. prikl. spektrosk. [J. Appl. Spectrosc.]. 2010. Vol. 77, No. 1. P. 74–81 (in Russ.).
  8. Berger G., Muller R., Klehr A., et al. Polarization bistability in strained ridge waveguide InGaAsP/InP lasers: Experiment and theory. J. Appl. Phys. 1995. Vol. 77. P. 6135–6144. DOI: 10.1063/1.359139.
  9. Burak D., Moloney J. V., Binder R. Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers. IEEE J. Quantum Electron. 2000. Vol. 36, issue 8. P. 956–970. DOI: 10.1109/3.853556.
  10. Danckaert J., Nagler B., Albert J., et al. Minimal rate equations describing polarization switching in vertical-cavity surface-emitting lasers. Opt. Commun. 2002. Vol. 201. P. 129–137.
  11. Burov L. I., Gorbatsevich A. S., Lobatsevich P. M. The induced amplification dichroism in surface-emitting semiconductor lasers. Vestnik BGU. Ser. 1, Fiz. Mat. Inform. 2016. No. 3. P. 63–70 (in Russ.).
  12. Ryvkin B., Panajotov K., Georgievski A., et al. Effect of photon-energy-dependent loss and gain mechanisms on polarization switching in vertical-cavity surface-emitting lasers. J. Opt. Soc. Am. B. 1999. Vol. 16, No. 1. P. 2106–2111. DOI: 10.1364/70SAB.16.002106.
  13. Cassidy D. T., Adams C. S. Polarization of the output of InGaAsP semiconductor diode laser. IEEE J. Quantum Electron. 1989. Vol. 25, issue 6. P. 1156–1160. DOI: 10.1109/3.29241.

Downloads

Published

2018-04-30

How to Cite

(1)
Burov, L. I.; Gorbatsevich, A. S.; Lobatsevich, P. M. The Effect of the Orientational Anisotropy of VCSEL Parameters on the Possibility to Implement Polarization Switching. Журнал Белорусского государственного университета. Физика 2018, No. 1, 51-57.