Solidity properties of neutron-irradiated CdTe epitaxial films

Authors

  • Aziza T. Akobirova Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan
  • Dmitry I. Brinkevich Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus
  • Sergey A. Vabishchevich Polotsk State University, 29 Blachina Street, Novopolotsk 211440, Belarus
  • Victoryia I. Halauchyk Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus
  • Michail G. Lukashevich Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus
  • Barot I. Mahsudov Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

Keywords:

cadmium telluride, substrate, film, neutron, indention, sclerometry
Supporting Agencies
The research has been carried out in the framework of bilateral cooperation between Belarusian State University and Tajik National University from 03.05.2007.

Abstract

Investigations of solidity properties (microhardness, chapresist, distruction effective energy, microfragility) of CdTe thin films prepared on CdTe substrate CdTe/CdTe and silicon substrate CdTe/Si and influence of neutron-irradiation on these parameters have been carried out by means of indention and sclerometry methods. It was shown that microhardness increases with strength increasing because of strain deformation. Solidity properties of CdTe/CdTe films close to the bulk substrate, while K1c and γ for CdTe/Si films 3–8 times lower. It was observed that microhardness of CdTe/Si films increases with neutron doze increasing, while for CdTe/Si films – decreases.

Author Biographies

  • Aziza T. Akobirova, Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

    PhD (physics and mathematics); associate professor at the department of physical electronics, faculty of physics

  • Dmitry I. Brinkevich, Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

    PhD (physics and mathematics); leading researcher at the department of semiconductor physics and nanoelectronics, faculty of physics

  • Sergey A. Vabishchevich, Polotsk State University, 29 Blachina Street, Novopolotsk 211440, Belarus

    senior lecturer at the department of physics, faculty of radio engineering

  • Victoryia I. Halauchyk, Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

    student at the faculty of physics

  • Michail G. Lukashevich, Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

    doctor of science (physics and mathematics), full professor; professor at the department of semiconductors and nanoelectronic, faculty of physics

  • Barot I. Mahsudov, Tajik National University, 17 Rudaki Avenue, Dushanbe 734025, Tajikistan

    doctor of science (physics and mathematics), full professor; head of the department of nuclear physics, faculty of physics

References

  1. Klevkov Y. V., Kolosov S. A., Medvedev S. A., et al. [Electrical and photoelectric properties of textured polycrystals of CdTe]. Fiz. tekh. poluprovodn. [Semiconductors]. 2001. Vol. 35, issue 10. P. 1192–1196 (in Russ.).
  2. Akobirova A. T., Halauchyk V. I., Lukashevich M. G., et al. Surface morphology of cadmium telluride films prepared by vacuum sputtering on the silicon and cadmium telluride substrates. J. Belarus. State Univ. Phys. 2017. No. 2. P. 69–75 (in Russ.).
  3. Nuriyev I. R., Mekhrabova M. A., Nazarov A. M., et al. [Growth, structure and morphology of the surface of epitaxial CdTe films]. Fiz. tekh. poluprovodn. [Semiconductors]. 2017. Vol. 51, issue 1. P. 36–39 (in Russ.).
  4. Babentsov V., Sizov F., Franc J., et al. [Atomic force microscopy and photoluminescence of nanostructured CdTe]. Fiz. tekh. poluprovodn. [Semiconductors]. 2013. Vol. 47, issue 9. P. 1210–1214 (in Russ.).
  5. Kurilo I. V., Ilchuk G. A., Lukashuk S. V., et al. [Morphology, element composition and mechanical properties of polycrystalline layers of cadmium telluride]. Fiz. tekh. poluprovodn. [Semiconductors]. 2011. Vol. 45, issue 12. P. 1591–1598 (in Russ.).
  6. Mayorov V. A., Yafyasov A. M., Bozhevolnov V. B., et al. [Electrophysical and morphological properties of CdTe films synthesized by the molecular layering method]. Fiz. tekh. poluprovodn. [Semiconductors]. 2010. Vol. 44, issue 5. P. 590–593 (in Russ.).
  7. Brus V. V., Solovan M. N., Maistruk E. V., et al. [Peculiarities of the optical and electrical properties of polycrystalline CdTe films produced by the method of thermal evaporation]. Fiz. tverd. tela [Physics of the Solid State]. 2014. Vol. 56, issue 10. P. 1886–1890 (in Russ.).
  8. Belyaev A. P., Rubets V. P., Kalinkin I. P. [Formation of oriented films of cadmium telluride on an amorphous substrate in sharply nonequilibrium conditions]. Zh. tekh. fiz. [Technical Physics. The Russian Journal of Applied Physics]. 2001. Vol. 71, issue 4. P. 133–135 (in Russ.).
  9. Medvedev S. A., Klevkov Y. V., Kolosov S. A., et al. [Photoconductivity of coarse-grained polycrystals of CdTe]. Fiz. tekh. poluprovodn. [Semiconductors]. 2002. Vol. 36, issue 8. P. 937–940 (in Russ.).
  10. Belyaev A. P., Rubets V. P., Kalinkin I. P. [The initial stages of the formation of epitaxial films of compounds A2B6 in sharply nonequilibrium conditions on a mica-muscovite substrate]. Fiz. tverd. tela [Physics of the Solid State]. 1997. Vol. 39, issue 2. P. 382–386 (in Russ.).
  11. Brinkevich D. I., Vabishchevich N. V., Vabishchevich S. A. [Physicomechanical properties of GaP epitaxial layers]. Vestnik Polotskogo Univ. Ser. C: Fundamentalʼnye nauki. 2010. No. 9. P. 92–97 (in Russ.).
  12. Brinkevich D. I., Prosolovich V. S., Yankovsky Y. N., et al. [Measurement of microhardness of photoresist films on silicon by the scratching method]. Devices methods measurements. 2016. Vol. 7, No. 1. P. 77–84 (in Russ.). DOI: 10.21122/2220-9506-2016-7-1-77-84.
  13. Kontsevoi Y. A., Litvinov Y. M., Fattakhov E. A. [Plasticity and strength of semiconductor materials and structures]. Moscow : Radio i svyazʼ, 1982 (in Russ.).
  14. Kolesnikov Y. V., Morozov E. M. [Mechanics of contact destruction]. Moscow : Nauka, 1989 (in Russ.).
  15. Brinkevich D. I., Vabishchevich N. V., Prosolovich V. S. Micromechanical properties of GaP epilayers. Inorg. Mater. 2012. Vol. 48, issue 8. P. 768–772. DOI: 10.1134/S0020168512070047.
  16. Brinkevich D. I., Prosolovich V. S., Vabishchevich S. A., et al. Influence of background impurities on the formation of stacking faults in silicon wafers. Russ. Microelectron. 2006. Vol. 35, issue 2. P. 94–97. DOI: 10.1134/S1063739706020053.
  17. Medvedeva Z. S., Novoselova A. V., Lazarev V. B. (eds). [Physical and chemical properties of semiconductor substances] : reference book. Moscow : Nauka, 1979 (in Russ.).
  18. Samsonov G. V. (ed.). [Physical and chemical properties of elements] : reference book. Kiev : Naukova dumka, 1965 (in Russ.).
  19. Reutov V. F. [About the contribution of nanoclusters to the radiation hardening of metals]. Fiz. met. met. [Phys. met. met.]. 2003. Vol. 96, No. 6. P. 92–99 (in Russ.).
  20. Vabishchevich S. A., Vabishchevich N. V., Brinkevich D. I. [Suppression of radiation hardening in silicon doped with germanium]. Fiz. khim. obrab. materialov [Inorg. Mater.: Appl. Res. Phys. Chem. Mater. Treat.]. 2006. No. 4. P. 12–14 (in Russ.).

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Published

2018-04-30

How to Cite

(1)
Akobirova, A. T.; Brinkevich, D. I.; Vabishchevich, S. A.; Halauchyk, V. I.; Lukashevich, M. G.; Mahsudov, B. I. Solidity Properties of Neutron-Irradiated CdTe Epitaxial Films. Журнал Белорусского государственного университета. Физика 2018, No. 1, 73-79.