Application of the rapid thermal treatment for annealing the ion-doped layers of polysilicon

Authors

  • Victor M. Anishchik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Valiantsina A. Harushka «Belmikroanaliz» of the branch «Belmikrosistemy», JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus
  • Uladzimir A. Pilipenka Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vladimir V. Ponariadov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vitali A. Saladukha JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

Keywords:

rapid thermal treatment, polycrystalline silicon, ion-doped layer, surface resistance

Abstract

The possibility to apply the rapid thermal treatment procedure for the formation of ion-doped layers in polycrystalline silicon is considered. It is demonstrated that such rapid thermal treatment allows one to reduce redistribution of the implanted admixture, to make its electric activation more complete. The accelerated diffusion process of the admixture implanted into polycrystalline silicon with the use of the intense light flux is consistently explained.

Author Biographies

  • Victor M. Anishchik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    doctor of science (physics and mathematics), full professor; dean of the faculty of physics

  • Valiantsina A. Harushka, «Belmikroanaliz» of the branch «Belmikrosistemy», JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

    leading engineer

  • Uladzimir A. Pilipenka, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    corresponding member of the National Academy of Sciences of Belarus, doctor of science (technical); professor at the department of semiconductor physics and nanoelectronics, faculty of physics

  • Vladimir V. Ponariadov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

    PhD (physics and mathematics), docent; deputy dean, faculty of physics

  • Vitali A. Saladukha, JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

    PhD (technical); general director

References

  1. Turtsevich A. S., Anufriev L. P. [Polycrystalline Silicon Films in the Production Technology of Integrated Circuits and Semiconductor Devices]. Minsk, 2006.
  2. Vogler D., Doe P. ALD Special Report: Whereʼs the metal? Solid State Technol. 2003. No. 1. P. 35–40.

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Published

2017-05-30

Issue

No. 2 (2017): Journal of the Belarusian State University. Physics

Section

Semiconductor Physics and Engineering

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How to Cite

(1)
Anishchik, V. M.; Harushka, V. A.; Pilipenka, U. A.; Ponariadov, V. V.; Saladukha, V. A. Application of the Rapid Thermal Treatment for Annealing the Ion-Doped Layers of Polysilicon. Журнал Белорусского государственного университета. Физика 2017, No. 2, 63-68.