Variation of the silicon optical parameters after rapid heat treatment

Victor M. Anishchik; Valiantzina A. Harushka; Uladzimir A. Pilipenka; Vladimir V. Ponariadov; Vitali A. Saladukha; Anna A. Omelchenko Omelchenko

doi:10.33581/2520-2243-2021-3-81-85

Authors

Victor M. Anishchik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
Valiantzina A. Harushka «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
Uladzimir A. Pilipenka Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus; «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
Vladimir V. Ponariadov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
Vitali A. Saladukha «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
Anna A. Omelchenko Omelchenko «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

Keywords:

rapid heat treatment, absorption coefficient, refractive index, solid-phase recrystallisation

Abstract

The results of the effect of rapid heat treatment on the optical characteristics of a silicon wafer surface in the region of the G-point in the Brillouin zone are presented for different types of silicon wafers conductivity, their doping level, the covalent radii of dopants and the crystallographic orientation of the wafer surface. The absorption coefficient and refractive index of the initial 100 mm diameter samples KDB-12 <100>, KDB-10 <111>, KDB-0.005 <100> and KES-0.015 <100>, underwent standard chemical-mechanical polishing, was measured on a Uvisel 2 ellipsometer (Horiba Scientific, France) in the spectral range 0.6–6.0 eV (200–2100 nm) before and after rapid heat treatment. The incidence angle of the light beam was 70° relative to the sample plane. It is shown that the changes in the optical characteristics of the silicon surface in the spectral region of the location of the G-point in the Brillouin zone after rapid heat treatment is due to a decrease in the surface deformation potential due to solid-phase recrystallisation of the mechanically damaged layer. It has been established that carrying out the rapid heat treatment of silicon samples with a high boron concentration leads to a more significant decrease in the refractive index and absorption compared with silicon with a low boron concentration, due to an increase in the depletion of the silicon surface with boron as a result of diffusion processes at the silicon – silicon dioxide interface.

Author Biographies

Victor M. Anishchik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), full professor; professor at the department of solid state physics, faculty of physics
Valiantzina A. Harushka, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

leading engineer at the state center «Belmicroanalysis», branch «Belmicrosystems»
Uladzimir A. Pilipenka, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus; «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

corresponding member of the National Academy of Sciences of Belarus, doctor of science (engineering), full professor; professor at the department of physics of semiconductors and nanoelectronics, faculty of physics, Belarusian State University, and deputy director for scientific development, state center «Belmicroanalysis», branch «Belmicrosystems», «Integral» – Holding Management Company
Vladimir V. Ponariadov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; head of the training laboratory, department of solid state physics, faculty of physics
Vitali A. Saladukha, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

doctor of science (engineering); general director
Anna A. Omelchenko Omelchenko, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

engineer of the 1^st category at the state center «Belmicroanalysis», branch «Belmicrosystems»

References

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