Structural properties of graphene on copper substrates

  • Egor A. Kolesov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus http://orcid.org/0000-0001-8917-8937
  • Artem D. Pashinskiy Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Mikhail S. Tivanov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus http://orcid.org/0000-0002-4243-0813
  • Olga V. Korolik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Olesya O. Kapitanova Lomonosov Moscow State University, 1 Leninskie Gory Street, building 3, Moscow 119234, Russia http://orcid.org/0000-0002-7384-3426
  • Gennady N. Panin Institute for Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Institutskaya Street, Chernogolovka 142432, Moscow region, Russia, Nano-Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, Seoul 100-715, South Korea

Abstract

Introduction. Studies of the substrate influence on graphene properties are relevant due to the high sensitivity of this two-dimensional material to the smallest effects. At the same time, studies dedicated to the separation of direct substrate influence and residual synthesis effects on graphene properties are not described in the literature in sufficient detail.
Materials and methods. This paper presents the results of a study of the structural properties of as-grown and transferred graphene on copper substrates by Raman spectroscopy and atomic force microscopy.
Results and discussion. Using Raman spectroscopy, we found that the mechanical strain in the as-grown grapheme is increased, while negligibly small in transferred graphene, the strain coefficients being of 0.22– 0.33 and ∼ 0 %, respectively. Using atomic force microscopy, we showed that this effect does not relate to the copper surface irregularities: the average roughness of the substrate surface for as-grown graphene was of 20.4 nm, while for the transferred graphene it was of 62.0 nm, the height difference being of almost an order of magnitude greater for the latter. This contradiction was explained in terms of residual synthesis effects present in case of as-grown graphene.
Conclusion. Taking into account the analyzed substrate effects is important both for the refinement of methods for the initial characterization of as-grown graphene, and for practical applications requiring graphene transfer to corrugated and perforated substrates, membranes and objects of complex shape.

Author Biographies

Egor A. Kolesov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

postgraduate student at the department of ener gy physics, faculty of physics

Artem D. Pashinskiy, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

masterʼs degree student at the department of philosophy and methodology of science, faculty of philosophy and social science

Mikhail S. Tivanov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; head of the department of energy physics, faculty of physics

Olga V. Korolik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); head of the research laboratory of energy efficient materials and technologies, department of energy physics, faculty of physics

Olesya O. Kapitanova, Lomonosov Moscow State University, 1 Leninskie Gory Street, building 3, Moscow 119234, Russia

PhD (chemistry); junior researcher at the department of inorganic chemistry, faculty of chemistry

Gennady N. Panin, Institute for Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 6 Institutskaya Street, Chernogolovka 142432, Moscow region, Russia, Nano-Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, Seoul 100-715, South Korea

PhD (physics and mathematics); senior researcher at the laboratory of local diagnosis for semiconductor materials, Institute for Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, and professor at the faculty of physics, Nano-Information Technology Academy, Dongguk University

References

  1. Balandin AA. Superior thermal conductivity of single-layer graphene. Nano Letters. 2008;8(3):902 – 907. DOI: 10.1021/nl0731872.
  2. Bunch S, van der Zande AM, Verbridge SS, Frank IW, Tanenbaum DM, Parpia JM, et al. Electromechanical resonators from graphene sheets. Science. 2007;315(5811):490 – 493. DOI: 10.1126/science.1136836.
  3. Bolotin KI, Sikes KJ, Jiang Z, Klima M, Fudenberg G, Hone J, et al. Ultrahigh electron mobility in suspended graphene. Solid State Communications. 2008;146(9 –10):351–355. DOI: 10.1016/j.ssc.2008.02.024.
  4. Shin H, Yoon S-M, Choi WM, Park S, Lee D, Song IY, et al. Influence of Cu crystallographic orientation on electron transport in graphene. Applied Physics Letters. 2013;102:163102. DOI: 10.1063/1.4802719.
  5. Frank O, Vejpravova J, Holy V, Kavan L, Kalba M. Interaction between graphene and copper substrate: The role of lattice orientation. Carbon. 2014;68:440 – 451. DOI: 10.1016/j.carbon.2013.11.020.
  6. He R, Zhao L, Petrone N, Kim KS, Roth M, Hone J, et al. Large Physisorption Strain in Chemical Vapor Deposition of Graphene on Copper Substrates. Nano Letters. 2012;12(5):2408–2413. DOI: 10.1021/nl300397v.
  7. Guo L, Zhang Z, Sun H, Dai D, Cui J, Liad M, et al. Direct formation of wafer-scale single-layer graphene films on the rough surface substrate by PECVD. Carbon. 2018;129:456 – 461. DOI: 10.1016/j.carbon.2017.12.023.
  8. Regan W, Alem N, Alemán B, Geng B, Girit Ç, Maserati L, et al. A direct transfer of layer-area graphene. Applied Physics Letters. 2010;96:113102. DOI: 10.1063/1.3337091.
  9. Nemšák S, Strelcov E, Guo H, Hoskins BD, Duchoň T, Mueller DN, et al. In aqua electrochemistry probed by XPEEM: experimental setup, examples, and challenges. 2018. ArXiv:1802.02545.
  10. Hui F, Porti M, Nafria M, Duan H, Lanza M. Fabrication of graphene MEMS by standard transfer: High performance atomic force microscope tips. In: 10 th Spanish Conference on Electron Devices (CDE); 2015 February 11–13; Madrid, Spain. Madrid: IEEE; 2015. 978-1-4799-8108-3/151. DOI: 10.1109/CDE.2015.7087444.
  11. Martin-Olmos C, Rasool HI, Weiller BH, Gimzewski JK. Graphene MEMS: AFM Probe Performance Improvement. ACS Nano. 2013;7(5):4164 – 4170. DOI: 10.1021/nn400557b.
  12. Ferrari AC, Basko DM. Raman spectroscopy as a versatile tool for studying the properties of graphene. Nature Nanotechnology. 2013;8(4):235–246. DOI: 10.1038/nnano.2013.46.
  13. Liang X, Sperling BA, Calizo I, Cheng G, Hacker CA, Zhang Q, et al. Toward Clean and Crackless Transfer of Graphene. ACS Nano. 2011;5(11):9144 – 9153. DOI: 10.1021/nn203377t.
  14. Gao L, Ni G-X, Liu Y, Liu B, Neto AHC, Loh KP. Face-to-face transfer of wafer-scale graphene films. Nature. 2014;505(7482): 190 –194. DOI: 10.1038/nature12763.
  15. Her M, Beams R, Novotny L. Graphene transfer with reduced residue. Physics Letters A. 2013;377(21–22):1455–1458. DOI: 10.1016/j.physleta.2013.04.015.
  16. Ferrari AC, Meyer JC, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, et al. Raman spectrum of graphene and graphene layers. Physical Review Letters. 2006;97(18):187401. DOI: 10.1103/PhysRevLett.97.187401.
  17. Hao Y, Wang Y, Wang L, Ni Z, Wang Z, Wang R, et al. Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy. Small. 2010;6:195–200. DOI: 10.1002/smll.200901173.
  18. Cançado LG, Jorio A, Ferreira EHM, Stavale F, Achete CA, Capaz RB, et al. Quantifying defects in graphene via Raman spectroscopy at different excitation energies. Nano Letters. 2011;11(8):3190 –3196. DOI: 10.1021/nl201432g.
  19. Tivanov MS, Kolesov EA, Praneuski AG, Korolik OV, Saad AM, Komissarov IV, et al. Significant G peak temperature shift in Raman spectra of graphene on copper. Journal of Materials Science: Materials in Electronics. 2016;27(9):8879 – 8883. DOI: 10.1007/s10854-016-4913-7.
  20. Mohiuddin TMG, Lombardo A, Nair RR, Bonetti A, Savini G, Jalil R, et al. Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation. Physical Review B. 2009;79:205433. DOI: 10.1103/PhysRevB.79.205433.
  21. Ferralis N. Probing mechanical properties of graphene with Raman spectroscopy. Journal of Materials Science. 2010;45(19):5135–5149. DOI: 10.1007/s10853-010-4673-3.
  22. Zhang Y, Gao T, Gao Y, Xie S, Ji Q, Yan K, et al. Defect-like Structures of Graphene on Copper Foils for Strain Relief Investigated by High-Resolution Scanning Tunneling Microscopy. ACS Nano. 2011;5(5):4014 – 4022. DOI: 10.1021/nn200573v.
Published
2019-05-20
Keywords: graphene, mechanical strain, Raman spectroscopy, AFM, substrate
Supporting Agencies This work was supported by Belarusian State Program for Research «Photonics, opto- and microelectronics» and Russian Foundation of Basic Researches grant No. 16-33-60229.
How to Cite
Kolesov, E. A., Pashinskiy, A. D., Tivanov, M. S., Korolik, O. V., Kapitanova, O. O., & Panin, G. N. (2019). Structural properties of graphene on copper substrates. Journal of the Belarusian State University. Physics, 2, 58-65. https://doi.org/10.33581/2520-2243-2019-2-58-65