Formation and annealing of radiation defects in silicon, implanted with hydrogen ions

DOI: https://doi.org/10.33581/2520-2243-2019-3-68-72

Abstract

Energy spectrum of radiation defect levels in n-type epitaxial silicon irradiated with 300 keV hydrogen ions was studied by DLTS (deep level transient spectroscopy) method. The increase in the amplitude of DLTS peak with the increase in the temperature of its registration was found. This indicates the formation of areas of defects accumulation with displacement density lower initial level of doping. After exposure of irradiated samples at room temperature for several months, these areas decay with isolated point A-, E-centers and hydrogen defects with an Ec – 0.31 eV level formation. It is shown that complexes with an Ec – 0.31 eV level are formed by attaching hydrogen atoms to A-center. At Т > 150 °С, this defect begins to anneal, and at the same time A-center concentration is increased.

Author Biographies

Alexei V. Giro, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

senior lecturer at the department of energy physics, faculty of physics

Yuri M. Pokotilo, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; associate professor at the department of energy physics, faculty of physics

Alla N. Petukh, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); head of the educational laboratory, department of energy physics, faculty of physics

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Published
2019-10-05
Keywords: silicon, ion implantation, radiation defects, hydrogen, annealing, DLTS
How to Cite
Giro, A. V., Pokotilo, Y. M., & Petukh, A. N. (2019). Formation and annealing of radiation defects in silicon, implanted with hydrogen ions. Journal of the Belarusian State University. Physics, 3, 68-72. https://doi.org/10.33581/2520-2243-2019-3-68-72
Issue
No 3 (2019): Journal of the Belarusian State University. Physics
Section
Condensed State Physics

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