Еlectrophysical parameters of the diodes for broadband noise generation

  • Viktar V. Busliuk Science-Production Enterprise «SKB “West”», 96/1 Suvorava Street, Brest 224022, Belarus
  • Ilona Y. Neroda Science-Production Enterprise «SKB “West”», 96/1 Suvorava Street, Brest 224022, Belarus
  • Aliaksandr N. Pyatlitski JSC «Integral»,121A Kazinca Street, Minsk 220108, Belarus
  • Uladzislau S. Prasalovich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Yuri N. Yankouski JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus
  • Raman A. Lanouski Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Abstract

The volt-ampere and volt-farad characteristics of silicon diodes – noise generators fabricated by the planar technology for the formation of small diameter (<10 mm) cylindrical p–n-junctions on the basis of the (111) orientation monocrystal silicon substrates with r = 0.03 Ohm ∙ cm (ND102 – ND104) and r = 0.005 Ohm ⋅ cm (ND 201) are analyzed. A depth of the p–n-junction formed by diffusion of phosphorus is ~6 μm. On reverse switching, the breakdown voltage for all diodes is growing with the increased measuring temperature due to a decrease in the mean free path of the charge carriers. With the reverse bias possess, the volt-ampere characteristics are activation in nature. As shown by the analysis performed, in all cases the dependence is stronger than Irev ~ U n, n ≈ 1. The activation energy of the process under study is within the range 0.25–0.45 eV. This is peculiar for thermal ionization from deep impurity centers of the technological (background) impurities such as Cu and Fe. The capacitance-voltage characteristics are insignificantly dependant on temperature pointing to the fact that the concentration of these centers in the vicinity of the p–n-junction volume charge is minor as compared with the doping level. It may be concluded that avalanche breakdown of the p–n-junction is strongly localized, microplasmic in its nature, and determined by ionization of the technological impurities which form the base of microplasmas inhomogeneously distributed over the crystal bulk.

Author Biographies

Viktar V. Busliuk, Science-Production Enterprise «SKB “West”», 96/1 Suvorava Street, Brest 224022, Belarus

chief engineer

Ilona Y. Neroda, Science-Production Enterprise «SKB “West”», 96/1 Suvorava Street, Brest 224022, Belarus

process engineer

Aliaksandr N. Pyatlitski, JSC «Integral»,121A Kazinca Street, Minsk 220108, Belarus

PhD (physics and mathematics); director

Uladzislau S. Prasalovich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; leading researcher at the research laboratory of spectroscopy of the department of semiconductor physics and nanoelectronics, faculty of physics

Yuri N. Yankouski, JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

PhD (physics and mathematics); head of the research laboratory of spectroscopy of the department of semiconductor physics and nanoelectronics, faculty of physics

Raman A. Lanouski, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

student at the faculty of physics

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Published
2017-01-23
Keywords: diodes – noise generators, electrophysical parameters, microplasmas
How to Cite
Busliuk, V. V., Neroda, I. Y., Pyatlitski, A. N., Prasalovich, U. S., Yankouski, Y. N., & Lanouski, R. A. (2017). Еlectrophysical parameters of the diodes for broadband noise generation. Journal of the Belarusian State University. Physics, 1, 95-99. Retrieved from https://journals.bsu.by/index.php/physics/article/view/430
Section
Semiconductor Physics and Engineering