Charging properties of thin gate dielectrics, obtained by the method of rapid thermal processing

  • Natalya S. Kovalchuk «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Yuliya A. Marudo «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Anna A. Omelchenko «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Uladzimir A. Pilipenka «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Vitali A. Saladukha «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Sergey A. Demidovich «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Vladimir V. Kolos «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Victor M. Anishchik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Viktar A. Filipenia «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Dmitry V. Shestovski «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus https://orcid.org/0000-0002-4259-3276
DOI: https://doi.org/10.33581/2520-2243-2022-1-80-87

Abstract

The charge properties of thin dielectrics, obtained by rapid thermal processing (RTP), and their interfaces with silicon for MOS transistors are investigated. The production of insulator layers was carried out by a two- or three-stage RTP with photon processing regimes similar for each stage (duration – 12 s, maximum temperature – 1250 °C). After the third stage of RTP in a nitrogen atmosphere of the gate oxides, obtained by a two-stage process in oxygen atmosphere, the defects responsible for local charge centers are partially eliminated. There is also an increase in the relative value of the surface potential by an average of 100 relative units. The elimination of defects is a consequence of the rearrangement of the structure of the dielectric, its interface with silicon, and the diffusion of oxygen and silicon atoms along the interface of the insulator layer. For samples obtained by a two-stage RTP in an oxygen atmosphere and subjected to the third stage of processing in a forming gas, there is an almost complete elimination of local charge centers and an increase in the relative value of the surface potential by an average of 300 relative units. In this case, in addition to the processes occurring during the treatment of SiO2 by the RTP method in an nitrogen atmosphere, the liquidation of charge centers is a consequence of the passivation of defects by hydrogen atoms.

Author Biographies

Natalya S. Kovalchuk, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

PhD (engineering), docent; deputy chief engineer

Yuliya A. Marudo, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

engineer at the state center «Belmicroanalysis», branch STC «Belmicrosystems»

Anna A. Omelchenko, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

engineer at the state center «Belmicroanalysis», branch STC «Belmicrosystems»

Uladzimir A. Pilipenka, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

сorresponding member of the National Academy of Sciences of Belarus, doctor of science (engineering), full professor; deputy director for scientific development at the state center «Belmicroanalysis», branch STC «Belmicrosystems»

Vitali A. Saladukha, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

doctor of science (engineering); general director

Sergey A. Demidovich, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

leading engineer at the industrial laboratory of new technologies and materials

Vladimir V. Kolos, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

PhD (physics and mathematics); chief of the industrial laboratory of new technologies and materials

Victor M. Anishchik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), full professor; professor at the department of solid state physics, faculty of physics

Viktar A. Filipenia, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

leading engineer at the state center «Belmicroanalysis», branch STC «Belmicrosystems»

Dmitry V. Shestovski, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

engineer-technologist at the department of advanced technological processes

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Published
2022-01-28
Keywords: gate dielectric, rapid thermal processing, three-stage process, surface potential
How to Cite
Kovalchuk, N. S., Marudo, Y. A., Omelchenko, A. A., Pilipenka, U. A., Saladukha, V. A., Demidovich, S. A., Kolos, V. V., Anishchik, V. M., Filipenia, V. A., & Shestovski, D. V. (2022). Charging properties of thin gate dielectrics, obtained by the method of rapid thermal processing. Journal of the Belarusian State University. Physics, 1, 80-87. https://doi.org/10.33581/2520-2243-2022-1-80-87
Issue
No 1 (2022): Journal of the Belarusian State University. Physics
Section
Semiconductor Physics and Engineering

Copyright (c) 2022 Journal of the Belarusian State University. Physics

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