Application of the rapid thermal treatment for annealing the ion-doped layers of polysilicon

  • Victor M. Anishchik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Valiantsina A. Harushka «Belmikroanaliz» of the branch «Belmikrosistemy», JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus
  • Uladzimir A. Pilipenka Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vladimir V. Ponariadov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vitali A. Saladukha JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

Abstract

The possibility to apply the rapid thermal treatment procedure for the formation of ion-doped layers in polycrystalline silicon is considered. It is demonstrated that such rapid thermal treatment allows one to reduce redistribution of the implanted admixture, to make its electric activation more complete. The accelerated diffusion process of the admixture implanted into polycrystalline silicon with the use of the intense light flux is consistently explained.

Author Biographies

Victor M. Anishchik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), full professor; dean of the faculty of physics

Valiantsina A. Harushka, «Belmikroanaliz» of the branch «Belmikrosistemy», JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

leading engineer

Uladzimir A. Pilipenka, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

corresponding member of the National Academy of Sciences of Belarus, doctor of science (technical); professor at the department of semiconductor physics and nanoelectronics, faculty of physics

Vladimir V. Ponariadov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; deputy dean, faculty of physics

Vitali A. Saladukha, JSC «Integral», 121A Kazinca Street, Minsk 220108, Belarus

PhD (technical); general director

References

  1. Turtsevich A. S., Anufriev L. P. [Polycrystalline Silicon Films in the Production Technology of Integrated Circuits and Semiconductor Devices]. Minsk, 2006.
  2. Vogler D., Doe P. ALD Special Report: Whereʼs the metal? Solid State Technol. 2003. No. 1. P. 35–40.
Published
2017-05-30
Keywords: rapid thermal treatment, polycrystalline silicon, ion-doped layer, surface resistance
How to Cite
Anishchik, V. M., Harushka, V. A., Pilipenka, U. A., Ponariadov, V. V., & Saladukha, V. A. (2017). Application of the rapid thermal treatment for annealing the ion-doped layers of polysilicon. Journal of the Belarusian State University. Physics, 2, 63-68. Retrieved from https://journals.bsu.by/index.php/physics/article/view/441
Issue
No 2 (2017): Journal of the Belarusian State University. Physics
Section
Semiconductor Physics and Engineering

Copyright (c) 2017 Journal of the Belarusian State University. Physics

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