Effect of long-term and rapid thermal treatments on the formation of the aluminum – polysilicon interface

  • Uladzimir A. Pilipenka «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus; Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Natalya S. Kovalchuk «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
  • Dmitry V. Zhyhulin «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
  • Dmitry V. Shestovski «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
  • Victor M. Anishchik Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vladimir V. Ponariadov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Abstract

The influence of long-term and rapid thermal treatments on the formation of the aluminum – polysilicon interface on aluminum – polysilicon – silicon dioxide structures in order to study the ohmic contacts in the element base of integrated circuits are considered. The obtained structures were subjected to various thermal treatments: standard (long-term) thermal annealing (450 °С, 20 min, N2 environment) used to create ohmic contacts at the stage of integrated circuit manufacturing and rapid thermal annealing (450 °С, 7 s, Ar environment). It is established, that during long-term thermal treatment, polysilicon is completely dissolved in aluminum, followed by segregation in the form of separate acute-angled polysilicon conglomerates on the surface of silicon dioxide, which can lead to a complete failure of the integrated circuit. With rapid thermal treatment, this effect is not observed. Thus, when forming an ohmic aluminum – polysilicon contact at the stage of integrated circuit manufacturing, it is advisable to use rapid thermal treatment, which significantly reduces the dissolution of polysilicon in aluminum and thereby contributes to the formation of an ohmic contact.

Author Biographies

Uladzimir A. Pilipenka, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus; Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

corresponding member of the National Academy of Sciences of Belarus, doctor of science (engineering), full professor; deputy director for scientific development at the state center «Belmicroanalysis», branch STC «Belmicrosystems», «Integral» – Holding Management Company, and professor at the department of semiconductor physics and nanoelectronics, faculty of physics, Belarusian State University

Natalya S. Kovalchuk, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

PhD (engineering), docent; deputy general director and chief engineer

Dmitry V. Zhyhulin, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

head of the sector of physical and technical analysis, state center «Belmicroanalysis», branch STC «Belmicrosystems»

Dmitry V. Shestovski, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

engineer-technologist at the department of advanced technological processes

Victor M. Anishchik, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), full professor; professor at the department of solid state physics and nanotechnologies, faculty of physics

Vladimir V. Ponariadov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; head of the training laboratory, department of solid state physics and nanotechnologies, faculty of physics

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Published
2023-05-29
Keywords: aluminum – polysilicon interface, ohmic contact, rapid thermal treatment, integrated circuit, scanning electron microscopy, energy dispersive microanalysis
How to Cite
Pilipenka, U. A., Kovalchuk, N. S., Zhyhulin, D. V., Shestovski, D. V., Anishchik, V. M., & Ponariadov, V. V. (2023). Effect of long-term and rapid thermal treatments on the formation of the aluminum – polysilicon interface. Journal of the Belarusian State University. Physics, 2, 51-57. Retrieved from https://journals.bsu.by/index.php/physics/article/view/5603
Issue
No 2 (2023): Journal of the Belarusian State University. Physics
Section
Semiconductor Physics and Engineering

Copyright (c) 2023 Journal of the Belarusian State University. Physics

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