Two schemes for producing molecular ions on a bent graphene layers

  • Nikolai A. Poklonski Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus https://orcid.org/0000-0002-0799-6950
  • Sergey V. Ratkevich Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Sergey A. Vyrko Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus
  • Anatoli T. Vlassov Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

Abstract

A brief review of methods for producing molecular ions is given, on the basis of which two original schemes for generation of a flow of negatively and positively charged ions from a flow of electrically neutral molecules scattered on electrically conductive bent graphene layers are proposed. When graphene layers are bent, the densities of p-electrons of carbon atoms are redistributed, and a deformation-induced electric dipole moment appears in the direction perpendicular to the bent surface. The presented schemes differ in the mutual arrangement of the bent graphene layers relative to the flow of molecules. Quantum chemical calculations using the PM7 semiempirical method provide estimates of the electron affinity and ionisation energy (potential) of a number of molecules (C60, O2, H2O, CO2, etc.) suitable for production of molecular ions from them according to the proposed schemes. If a molecule is scattered on a negatively charged graphene side, then due to the transfer of an electron from graphene to the molecule, the molecule acquires a negative charge. If a molecule is scattered on a positively charged graphene side, then due to the transfer of an electron from the molecule to graphene, the molecule acquires a positive charge. To obtain molecular ions, it is necessary to select molecules with values of electron affinity (to obtain negative ions) or ionisation energy (to obtain positive ions) close to the work function of graphene (≈ 4.3 eV).

Author Biographies

Nikolai A. Poklonski, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), corresponding member of the National Academy of Sciences of Belarus, full professor; professor at the department of semiconductor physics and nanoelectronics, faculty of physics

Sergey V. Ratkevich, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

senior lecturer at the department of physics and aerospace technologies, faculty of radiophysics and computer technologies

Sergey A. Vyrko, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); senior researcher at the laboratory of physics of electronic materials, department of semiconductor physics and nanoelectronics, faculty of physics

Anatoli T. Vlassov, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); leading researcher at the laboratory of physics of electronic materials, department of semiconductor physics and nanoelectronics, faculty of physics

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Published
2023-10-28
Keywords: bent graphene layer, π-electrons, molecule, molecular ion, ionisation, electron affinity
Supporting Agencies This work was supported by the Belarusian Republican Foundation for Fundamental Research (grant No. F23RNF-049).
How to Cite
Poklonski, N. A., Ratkevich, S. V., Vyrko, S. A., & Vlassov, A. T. (2023). Two schemes for producing molecular ions on a bent graphene layers. Journal of the Belarusian State University. Physics, 3, 57-64. Retrieved from https://journals.bsu.by/index.php/physics/article/view/5710
Issue
No 3 (2023): Journal of the Belarusian State University. Physics
Section
Condensed State Physics

Copyright (c) 2023 Journal of the Belarusian State University. Physics

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