Formation of the silicides in two-layer structures nickel-vanadium alloy – platinum on silicon during rapid heat treatment

  • Jaroslav A. Solovjov «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus
  • Peter I. Gaiduk Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

Abstract

Using Rutherford backscattering, X-ray phase analysis, transmission electron microscopy and transmission electron diffraction methods, the effect of the temperature of rapid heat treatment of two-layer structures nickel-vanadium alloy – platinum on silicon substrates with orientation (111) on structural-phase transformations in the forming silicide layers and their contact barrier properties. The thickness of the nickel-vanadium alloy layer (93 wt. % Ni, 7 wt. % V) was from 20 to 60 nm, the thickness of the platinum layer was 40 nm. Rapid heat treatment was carried out in the thermal balance mode by irradiating reverse side of the substrates with an incoherent light flux of quartz halogen lamps of constant power in a nitrogen ambient for 7 s until a temperature of 400 to 600 °C. It was found that at a temperature of 400 °C, a PtSi layer is formed at the interface with silicon. At a temperature of 450 °C, nickel diffusion from the surface layer to the substrate is observed, followed by the formation of quasi-epitaxial NiSi domains at the interface with silicon. At temperatures above 500 °C, increased diffusion of platinum to the interface with silicon is observed with the formation of NiPtSi silicide composition. At the temperatures from 550 to 600 °C, the nickel and platinum distribution over the layer thickness becomes uniform. The nickel content in it is proportional to the initial thickness of the nickel-vanadium alloy layer, and the vanadium is localised in the near-surface region of the silicide layer and does not affect the contact barrier properties. It has been established that a silicide layer with minimal defects in the interface with silicon and the best reproducibility of the Schottky barrier height is formed at a temperature of 550 °C. In this case the Schottky barrier height varies from 0.77 to 0.81 V when the thickness of the nickel-vanadium alloy layer changes.

Author Biographies

Jaroslav A. Solovjov, «Integral» – Holding Management Company, 121a Kazinca Street, Minsk 220108, Belarus

PhD (engineering), docent; head of the laboratory of new technologies and materials

Peter I. Gaiduk, Belarusian State University, 4 Niezaliezhnasci Avenue, Minsk 220030, Belarus

doctor of science (physics and mathematics), docent; professor at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

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Published
2024-05-23
Keywords: silicides, nickel, platinum, rapid heat treatment, structural-phase transformations, Schottky barrier
Supporting Agencies This work was carried out within the framework of projects of the state programmes of scientific research «Photonics, opto- and microelectronics» (state registration No. 20191100) and «Photonics and electronics for innovations » (state registration No. 20212702). The authors are grateful to O. V. Milchanin and S. V. Zlotsky for assistance in performing the experiment.
How to Cite
Solovjov, J. A., & Gaiduk, P. I. (2024). Formation of the silicides in two-layer structures nickel-vanadium alloy – platinum on silicon during rapid heat treatment. Journal of the Belarusian State University. Physics, 2, 57-68. Retrieved from https://journals.bsu.by/index.php/physics/article/view/6150
Issue
No 2 (2024): Journal of the Belarusian State University. Physics
Section
Condensed State Physics

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