Bands shifting in the Raman spectra of silicon – germanium solid solutions treated in hydrogen plasma
Abstract
Silicon – germanium solid solution films with different compositions, treated in hydrogen plasma and also heat-treated at 275 °C, were studied by Raman spectroscopy. It was found that treatment in hydrogen plasma leads to a shift of the Si — Si, Ge — Ge and Si — Ge bands in the Raman spectrum towards lower frequencies. The Si — H bands observed in the spectra of pure silicon are not observed in the spectra of silicon – germanium solid solutions.
References
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Published
2024-04-23
Keywords:
silicon – germanium solid solutions, hydrogen plasma, Raman scattering
How to Cite
Volobuev, V. S., & Giro, A. V. (2024). Bands shifting in the Raman spectra of silicon – germanium solid solutions treated in hydrogen plasma. Journal of the Belarusian State University. Physics, 2, 93-98. Retrieved from https://journals.bsu.by/index.php/physics/article/view/6206
Section
Condensed State Physics
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