Effect of ultraviolet exposure on the optical properties of silicon-based dielectrics
Abstract
The effect of ultraviolet range of solar spectrum (185–400 nm) exposure for 6 h with an energy flux density 20 times higher than the corresponding parameter of natural solar radiation on the optical properties of silicon-based dielectric layers on silicon was studied. Silicon nitride (SiNx), oxide (SiOx) and oxynitride (SiOxNy) films with thicknesses of 11–25 nm were deposited by inductively coupled plasma chemical vapor deposition method. The reflectance spectra of thin dielectric films were analysed before and after ultraviolet exposure. It has been shown that ultraviolet irradiation results in an increase of the refractive index of the silicon-rich SiNx and SiOx films by Δn = 0.03–0.09, while the refractive index of the SiOxNy film remains almost unchanged (Δn < 0.01). Analysis of the infrared spectra did not reveal any changes in the chemical composition of the dielectric films after ultraviolet irradiation. The origin of the effect of ultraviolet exposure on the optical properties of silicon-based dielectric films of various elemental and structural compositions is discussed. The reported results can be used when choosing dielectrics for devices operating in outer space in low Earth orbits.
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