Electroluminescence of SiO2 films grown on Si by thermal oxidation and plasma-enhanced chemical vapor deposition

  • Ivan A. Romanov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus https://orcid.org/0000-0001-8273-6908
  • Natalya S. Kovalchuk «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Liudmila A. Vlasukova Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Irina N. Parkhomenko Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Vitali A. Saladukha «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Uladzimir A. Pilipenka Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus; «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Dmitry V. Shestovski «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
  • Sergey A. Demidovich «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus
DOI: https://doi.org/10.33581/2520-2243-2021-3-26-31

Abstract

Emission of the silicon oxide films grown on Si by wet thermal oxidation at 900 °С and by plasma-enhanced chemical vapor deposition from the SiH4 + N2O mixture at 350 °С has been compared using electroluminescence. The electroluminescence spectra were recorded in electrolyte – insulator – semiconductor system. The intense band in the red range with a maximum at 1.9 eV dominates the electroluminescence spectrum of the thermal oxide film. It was concluded that this band is related with the existence of silanol groups (Si — OH) in the oxide matrix. Multiband emission in the UV range is observed in the electroluminescence spectrum of the oxide film formed by plasma-enhanced chemical vapor deposition. Additional investigations using IR and RS spectroscopy revealed that observed spectrum modulation is of an oscillatory nature and is not the result of interference. Presumably, the luminescence in the UV region is due to the presence of oxygen deficiency centers containing bonds with hydrogen atoms.

Author Biographies

Ivan A. Romanov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

assistant at the department of physical electronics and nanotechnologies, faculty of radiophysics and computer technologies

Natalya S. Kovalchuk, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

PhD (engineering), docent; deputy chief engineer

Liudmila A. Vlasukova, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); head of the laboratory of materials and device structures for micro- and nanoelectronics, faculty of radiophysics and computer technologies

Irina N. Parkhomenko, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); leading researcher at the laboratory of materials and device structures for micro- and nanoelectronics, faculty of radiophysics and computer technologies

Vitali A. Saladukha, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

doctor of science (engineering); general director

Uladzimir A. Pilipenka, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus; «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

corresponding member of the National Academy of Sciences of Belarus, doctor of science (engineering), full professor; professor at the department of physics of semiconductors and nanoelectronics, faculty of physics, Belarusian State University and deputy director for scientific development, state center «Belmicroanalysis», branch «Belmicrosystems», «Integral» – Holding Management Company

Dmitry V. Shestovski, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

engineer-technologist at the department of advanced technological processes

Sergey A. Demidovich, «Integral» – Holding Management Company, 121A Kazinca Street, Minsk 220108, Belarus

leading engineer at the branch laboratory of new technologies and materials

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Published
2021-10-20
Keywords: silicon oxide films, electroluminescence, electrolyte – insulator – semiconductor system, oxygen deficiency centers, silicon optoelectronics
Supporting Agencies This work was supported by the state program of scientific research «Photonics and electronic for innovations» (assignment 3.8.1, reg. No. 20212595).
How to Cite
Romanov, I. A., Kovalchuk, N. S., Vlasukova, L. A., Parkhomenko, I. N., Saladukha, V. A., Pilipenka, U. A., Shestovski, D. V., & Demidovich, S. A. (2021). Electroluminescence of SiO2 films grown on Si by thermal oxidation and plasma-enhanced chemical vapor deposition. Journal of the Belarusian State University. Physics, 3, 26-31. https://doi.org/10.33581/2520-2243-2021-3-26-31
Issue
No 3 (2021): Journal of the Belarusian State University. Physics
Section
Condensed State Physics

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