About the influence of elastic stresses on the implanted boron diffusion in silicon

  • Vladimir B. Odzaev Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus
  • Vladimir I. Plebanovich «Planar» Co., Partyzanski Avenue, 2, 220033, Minsk, Belarus
  • Mariya I. Tarasik Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus
  • Aleksei R. Chelyadinskii Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

Abstract

The influence of elastic stresses on the implanted boron diffusion in silicon layers supplementary doped with IV group Ge or C elements, having the reverse effect on the silicon lattice period, is studied. Compensation of elastic stresses is achieved in the layers doped with Ge and then implanted with B+ ions, whereas supplementary implantation of C+ ions leads to the increased elastic stresses within the layers implanted with B+ ions. In the layers supplementary doped with Ge or C, the diffusion coefficients of implanted boron decrease because the silicon self-interstitials responsible for the enhanced boron diffusion are spent in the process of substitution of Ge and C atoms (Watkins effect). The obtained results indicate that elastic stresses do not influence considerably the boron diffusion coefficient in silicon. 

Author Biographies

Vladimir B. Odzaev, Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

doctor of science (physics and mathematics), full professor; head of the department of semiconductor physics and nanoelectronics, faculty of physics

Vladimir I. Plebanovich, «Planar» Co., Partyzanski Avenue, 2, 220033, Minsk, Belarus

PhD (technical); deputy general director

Mariya I. Tarasik, Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

PhD (physics and mathematics); senior researcher at the department of energy physics, faculty of physics

Aleksei R. Chelyadinskii, Belarusian State University, Niezaliežnasci Avenue, 4, 220030, Minsk, Belarus

doctor of science (physics and mathematics); chief researcher at the department of semiconductor physics and nanoelectronics, faculty of physics

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Published
2017-09-29
Keywords: silicon, boron, diffusion, elastic stresses
How to Cite
Odzaev, V. B., Plebanovich, V. I., Tarasik, M. I., & Chelyadinskii, A. R. (2017). About the influence of elastic stresses on the implanted boron diffusion in silicon. Journal of the Belarusian State University. Physics, 3, 88-94. Retrieved from https://journals.bsu.by/index.php/physics/article/view/461
Issue
No 3 (2017): Journal of the Belarusian State University. Physics
Section
Condensed State Physics

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