Polarization switching transients in surface-emitting semiconductor lasers
Abstract
Based on numerical simulation, polarization hysteresis (PH) in surface-emitting semiconductor lasers (VCSEL) has been studied. In the process the characteristic feature was initiation of VCSEL by the triangular pulse, in which the current was linearly increasing from zero to the value significantly exceeding the polarization switching point (PS) and subsequently decreasing to zero at the same rate. The obtained numerical results demonstrated that all the peculiarities of the PH loop generation were associated with the lag effect of the polarization characteristics formation in the region of polarization switching. In particular, it has been shown that the range of the PH loop generation linearity can be expanded by shifting the PS point to the region of high injection currents.
References
- Chen Y. C., Liu J. M. Polarization bistability in semiconductor lasers. Appl. Phys. Lett. 1985. Vol. 46, issue 1. P. 16–18. DOI:10.1063/1.95834.
- Chen Y. C., Liu J. M. Polarization bistability in semiconductor lasers: Rate equation analysis. Appl. Phys. Lett. 1987. Vol. 50,issue 20. P. 1406–1408. DOI: 10.1063/1.97835.
- Klehr A., Barwolf A., Muller R., et al. Ultrafast polarization switching in ridge waveguide laser diodes. Electron. Lett. 1991.Vol. 27, No. 18. P. 1680–1682.
- Klehr A., Muller R., Voss M., et al. Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-fre-quency current modulation. Appl. Phys. Lett. 1994. Vol. 64, issue 7. P. 830–832. DOI: 10.1063/1.111028.
- Kawaguchi H. Bistable laser diodes and their applications: state of art. IEEE J. Sel. Topics Quant. Electron. 1997. Vol. 3, issue 5.P. 1254–1270. DOI: 10.1109/2944.658606.
- Chang-Hasnain C. J., Harbison J. P., Florez L. T., et al. Polarization characteristics of quantum well vertical cavity surfaceemitting lasers. Electron. Lett. 1991. Vol. 27, No. 2. P. 163–164.
- Yu S. F. Theoretical analysis of polarization bistability in vertical cavity surface emitting semiconductor lasers. J. LightwaveTechnol. 1997. Vol. 15, No. 6. P. 1032–1041.
- Kawaguchi H. Recent progress in polarization-bistable VCSELs and their applications to all-optical signal processing. In: Adv.lasers. New York : Springer, 2015. P. 1–17.
- Paul J., Masoller C., Mandel P., et al. Experimental and theoretical study of dynamical hysteresis and scaling laws in the po-larization switching of vertical-cavity surface-emitting lasers. Phys. Rev. A. 2008. Vol. 77, issue 4. Article ID: 043803. DOI: 10.1103/PhysRevA.77.043803.
- QuirceA., Perez P., Lin H., et al. Polarization switching region of optically injected long-wavelength VCSELs. IEEE J. Quant.Electron. 2014. Vol. 50, No. 11. P. 921–928.
- Virte M., Mirisola E., Sciamanna M., et al. Asymmetric dwell-time statistics of polarization chaos from free-running VCSEL.Opt. Lett. 2015. Vol. 40, No. 8. P. 1865–1867. DOI: 10.1364/OL.40.001865.
- Burov L. I., Gorbatsevich A. S., Lobatsevich P. M. The induced amplification dichroism in surface-emitting semiconductorlasers. Vestnik BGU. Ser. 1, Fiz. Mat. Inform. 2016. No. 3. P. 63–70 (in Russ.).
- Coldren L.A., Corzine S. W. Diode Lasers and Photonic Integrated Circuits. New York : Wiley, 1995.
- Burov L. I., GorbatsevichA. S., Lobatsevich P. M. The effect of the orientational anisotropy of VCSEL parameters on the pos-sibility to implement polarization switching. J. Belarus. State Univ. Phys. 2018. No. 1. P. 51–57 (in Russ.).
- Jadan М., Burov L. I., Gorbatsevich А. S. Point model for describing the polarization parameters of a single-mode semiconduc-tor laser. J. Appl. Spectrosc. 2012. Vol. 79, issue 4. P. 577–582. DOI: 10.1007/s10812-012-9642-y.
- Panajotov K., Prati F. Polarization Dynamics of VCSELs, VCSELs. Springer Ser. in Opt. Sci. 2013. Vol. 166. P. 181–231.
- Verschaffelt G., Panajotov K., Albert J., et al. Polarization switching in vertical-cavity surface-emitting lasers: from experimen-tal observations to applications. Opto-Electron. Rev. 2001. Vol. 9. P. 257–268.
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