Polarization switching transients in surface-emitting semiconductor lasers

  • Leonid I. Burov Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Alexander S. Gorbatsevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus
  • Pavel M. Lobatsevich Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

Abstract

Based on numerical simulation, polarization hysteresis (PH) in surface-emitting semiconductor lasers (VCSEL) has been studied. In the process the characteristic feature was initiation of VCSEL by the triangular pulse, in which the current was linearly increasing from zero to the value significantly exceeding the polarization switching point (PS) and subsequently decreasing to zero at the same rate. The obtained numerical results demonstrated that all the peculiarities of the PH loop generation were associated with the lag effect of the polarization characteristics formation in the region of polarization switching. In particular, it has been shown that the range of the PH loop generation linearity can be expanded by shifting the PS point to the region of high injection currents.

Author Biographies

Leonid I. Burov, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics), docent; associate professor at the department of general physics, faculty of physics

Alexander S. Gorbatsevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

PhD (physics and mathematics); associate professor at the department of general physics, faculty of physics

Pavel M. Lobatsevich, Belarusian State University, 4 Niezaliežnasci Avenue, Minsk 220030, Belarus

postgraduate student at the department of general physics, faculty of physics

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Published
2019-01-20
Keywords: polarization switching, polarization hysteresis, surface-emitting semiconductor lasers, anisotropy
How to Cite
Burov, L. I., Gorbatsevich, A. S., & Lobatsevich, P. M. (2019). Polarization switching transients in surface-emitting semiconductor lasers. Journal of the Belarusian State University. Physics, 2, 17-24. Retrieved from https://journals.bsu.by/index.php/physics/article/view/482