Refinement of the criterion for strong localization of electrons on a semiconductor surface

  • Temur T. Muratov Tashkent State Pedagogical University named after Nizami, 27 Bunedkor Street, Tashkent 100185, Uzbekistan

Abstract

Possibility of strong localization of the two-dimensional electron gas on the surface of the highly doped semiconductor is analyzed. Analytical formula for cross-section of low-energy scattering of surface electrons with take into account Fermi – Dirac’s distribution was obtained. Is noted about substantial feature of the point EF = 0 in quasi two-dimensional electrons systems than in its three-dimensional analogs. On the basis of Ioffe – Regel’s rule and formula obtained for average cross-section of scattering more precise realistic criterion of strong localization was obtained than it which has been obtained in other quoted articles.

Author Biography

Temur T. Muratov, Tashkent State Pedagogical University named after Nizami, 27 Bunedkor Street, Tashkent 100185, Uzbekistan

competitor at the department of teaching  methods in physics and astronomy, faculty of physics and mathematics

References

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Published
2019-01-20
Keywords: near-surface layer, natural size effect, Ioffe – Regel’s rule, Thomas – Fermi’s approximation, Fermi – Dirac’s distribution function, criterion of strong localization, cross-section of two-dimensional scattering
How to Cite
Muratov, T. T. (2019). Refinement of the criterion for strong localization of electrons on a semiconductor surface. Journal of the Belarusian State University. Physics, 2, 117-124. Retrieved from https://journals.bsu.by/index.php/physics/article/view/493
Issue
No 2 (2018): Journal of the Belarusian State University. Physics
Section
Physics of Electromagnetic Phenomena

Copyright (c) 2018 Journal of the Belarusian State University. Physics

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